IS42S32160F-6BL Allicdata Electronics
Allicdata Part #:

IS42S32160F-6BL-ND

Manufacturer Part#:

IS42S32160F-6BL

Price: $ 10.51
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 90TFBGA
More Detail: SDRAM Memory IC 512Mb (16M x 32) Parallel 167MHz 5...
DataSheet: IS42S32160F-6BL datasheetIS42S32160F-6BL Datasheet/PDF
Quantity: 1000
240 +: $ 9.55605
Stock 1000Can Ship Immediately
$ 10.51
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

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IS42S32160F-6BL is a type of very fast, low-power dynamic random access memory (DRAM) from Integrated Silicon Solution Inc (ISSI). It is a 16-Mb (1M x 16) Synchronous DRAM memory with 4 internal banks, operating from a single 3.3V supply. The IS42S32160F-6BL is available in a 54-pin TSOP type I package and asynchronous autonomous self-refresh, which makes it ideal for high-speed applications. Additionally, it also has a refresh rate of 8K cycles / 32ms, with a read and write cycle time of 10ns, making it perfect for various bandwidth and data intensive applications.

The main application field of IS42S32160F-6BL is high-speed and data intensive applications such as 3D graphics, medical imaging, industrial automation, gaming, high-definition television and audio, and image processing. Furthermore, it is also suited for professional audio/video workstations and digital signal processing applications, as it offers reliable and fast performance. Moreover, it can also be used in embedded systems and automotive functional safety applications, such as lane departure warning, pedestrian safety and autonomous vehicle driving.

The working principle of IS42S32160F-6BL is simple; when the memory is powered it needs to be initialized and supplied with clock and data. To access the data, the address and control signals are applied and the data can be put in or read from the memory, depending on the type of command. It has multiple data widths including x8 or x16 which determines the size of each access. The IS42S32160F-6BL also comes with an asynchronous autonomous self-refresh, which allows the memory to stay active even after the power is shut off, and enables the memory to be used in various applications with no need for additional components.

In summary, IS42S32160F-6BL is a synchronous DRAM memory that is suitable for high-speed and data intensive applications, embedded systems and automotive functional safety applications. Its simple working principle and asynchronous autonomous self-refresh enable it to be used in various applications with no need for additional components, and its read and write cycle time of 10ns makes it ideal for such applications. All in all, it is an ideal choice for high-performance projects.

The specific data is subject to PDF, and the above content is for reference

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