![IS42VM16320D-75BLI Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IS42VM16320D-75BLI-ND |
Manufacturer Part#: |
IS42VM16320D-75BLI |
Price: | $ 8.58 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 512M PARALLEL 54TFBGA |
More Detail: | SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel... |
DataSheet: | ![]() |
Quantity: | 1000 |
240 +: | $ 7.79744 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 6ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x13) |
Description
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IS42VM16320D-75BLI Memory: Application Field and Working Principle
IS42VM16320D-75BLI is a type of dynamical random access memory (DRAM) developed by Integrated Silicon Solution, Inc. (ISSI). It is a synchronous DRAM module with 32M x 16 bit organization, using 536,870,912 bit Synchronous DRAM organized by 2,097,152 words of 16 bits. This state-of-the-art product is designed to provide highest data processing speeds with minimum power requirements.Application field
The IS42VM16320D-75BLI is an excellent choice for many applications requiring high throughput, low latency and high reliability. It is ideal for use in computers, industrial automation and control, network, video and communications applications. In terms of industrial application, this memory can serve as the main memory used in industrial control systems. By providing micro-processor based device with quick access to its evolving data extremely fast, IS42VM16320D-75BLI provides a smooth overall operation.Architecture and working principle
IS42VM16320D-75BLI is based on the IBM EDO (Extended Data Out) technology. It represents the basic memory or RAM cell of the memory module and is composed of semiconductor materials such as silicon, germanium and gallium arsenide. Each of these active components is connected beyond a single voltage source to allow for the most effective data flow and storage. The underlying structure of the DRAM module is organized as a 32 x 16 matrix, which facilitates easy data access. The memory cell array is located in the core of the memory module.When data is written to the memory module, it is stored in the memory cells. The data is stored in a special pattern known as the bit-pattern, which is the combination of 0s and 1s. The bit-pattern is the sequence which determines the way the data is read and written to the memory. When data is written, the logic supply is switched on, the cells of the module are energized and the binary data is written to the cells. The cells then store the data as a bit-pattern.When data is read from the memory module, the logic supply is again switched on and the cells are energized. The binary data is then read and interpreted by a dedicated processor. The processor recognizes the pattern of the data stored in the memory cells and decodes it accordingly. The output is then used for various applications.Conclusion
IS42VM16320D-75BLI is a versatile, high-performance type of DRAM designed to provide reliable and fast data processing. It is the ideal choice for use in industrial automation and control, network, video and communication applications. This DRAM module is based on the IBM EDO technology and utilizes a special bit-pattern to write and read data to and from the memory cells. This ensures data accuracy, high reliability, and a reliable response time, even during high-speed data processing.The specific data is subject to PDF, and the above content is for reference
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