IS43DR86400C-3DBLI Allicdata Electronics
Allicdata Part #:

IS43DR86400C-3DBLI-ND

Manufacturer Part#:

IS43DR86400C-3DBLI

Price: $ 5.78
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 60TWBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 33...
DataSheet: IS43DR86400C-3DBLI datasheetIS43DR86400C-3DBLI Datasheet/PDF
Quantity: 1000
242 +: $ 5.25641
Stock 1000Can Ship Immediately
$ 5.78
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is essential for the operation of computers, phones and other devices. The IS43DR86400C-3DBLI is a memory device that can be used in many different applications. It has a wide range of features, including a high data rate, low power consumption and large storage capacity. This article will discuss the application field and working principle of the IS43DR86400C-3DBLI memory device.

The IS43DR86400C-3DBLI memory device is a synchronous dynamic random access memory (SDRAM) device. It is used in many different applications, including mobile phones, digital cameras, set-top boxes and gaming consoles. It provides high performance, low power consumption and large storage capacity. The memory device has a data rate of 800 MHz, with 8 Gb of storage capacity. It has an integrated power management controller and DDR3L technology for low power consumption. The device is also designed to be reliable and cost effective.

The working principle of the IS43DR86400C-3DBLI is based on synchronous dynamic random access memory (SDRAM) technology. It uses clocked operation to ensure consistency in the data transfer rate and read/write operations. The memory device uses two banks of cells, one for read operations and one for write operations. The device has a bus system that is synchronized to the clock, so that the read and write operations can be synchronized. The memory device also has an addressing scheme, which assigns memory addresses to each of the cells. This is used to access the data stored in the cells.

The IS43DR86400C-3DBLI memory device has a wide range of features, making it suitable for many different applications. It is capable of high performance, low power consumption and large storage capacity, making it a great choice for mobile phones, digital cameras, set-top boxes and gaming consoles. Additionally, the device is reliable and cost effective. The working principle is based on SDRAM technology, with a clocked operation and addressing scheme. All of these features make the IS43DR86400C-3DBLI memory device an ideal choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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