IS43DR16160A-3DBI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IS43DR16160A-3DBI Memory:
IS43DR16160A-3DBI is a type of memory, specifically known as a synchronous dynamic random access memory (SDRAM). It is a type of very fast random access memory that combines the features of static random access memory (SRAM) and dynamic random access memory (DRAM). The chip is made up of 16 individual memory cells, each containing 4 bits. IS43DR16160A-3DBI is manufactured by Integrated Silicon Solution, Inc. (ISSI), and is based on their SDRAM technology.

Application Field:
IS43DR16160A-3DBI memory is mainly used in applications such as computer servers, networking systems, storage appliances and embedded systems. It is also used in areas such as gaming, graphics and animation. It is commonly found in automobiles and aircraft. IS43DR16160A-3DBI is suitable for any application where high speed data storage and retrieval is required.

Working Principle:
IS43DR16160A-3DBI memory is based on DRAM technology. A DRAM chip consists of a grid of transistors, which form the individual cells. Each cell includes four transistors, a capacitor and a data line. When a memory access request is received, the capacitor in the cell is activated and data is read from the data line. The capacitor maintains its state until the power is turned off, or until the data is refreshed.

When writing data to the memory, the row and column addresses are determined and the corresponding row and column transistors are activated. This causes different voltages to be applied to the data lines in the cells, which causes the capacitors to store the data. When the row or column transistors are disabled, the data in the memory cells is maintained.

The SDRAM also uses an additional circuit, known as a row access strobe (RAS) circuit. This is used to maintain the current state of the memory cells, even when the power supply is switched off. During the write cycle, the RAS circuit applies a low voltage to the row and column transistors, which ensures that the capacitor can store the data. During a read operation, the RAS circuit applies a higher voltage to the transistors, allowing the data to be read from the memory cells.

IS43DR16160A-3DBI memory is capable of running at speeds of up to 166-333MHz, depending on the model. In addition, it has a wide operating temperature range of between -40°C to 85°C, and can be operated in an ambient temperature range of between 0°C and 70°C. The IS43DR16160A-3DBI memory is an efficient and reliable memory solution for any application which requires a large amount of memory.

Conclusion:
IS43DR16160A-3DBI is a type of synchronous dynamic RAM (SDRAM) that is mainly used in servers, networking systems, storage appliances and embedded systems. It combines the features of SRAM and DRAM and has a range of operating temperatures of between -40°C to 85°C and can be operated in an ambient temperature range of between 0°C and 70°C. The IS43DR16160A-3DBI memory is an efficient and reliable memory solution for any application which requires a large amount of memory.

The specific data is subject to PDF, and the above content is for reference