IS43DR16320D-3DBLI Allicdata Electronics
Allicdata Part #:

IS43DR16320D-3DBLI-ND

Manufacturer Part#:

IS43DR16320D-3DBLI

Price: $ 5.13
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 84TWBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 3...
DataSheet: IS43DR16320D-3DBLI datasheetIS43DR16320D-3DBLI Datasheet/PDF
Quantity: 1000
1 +: $ 5.13000
10 +: $ 4.97610
100 +: $ 4.87350
1000 +: $ 4.77090
10000 +: $ 4.61700
Stock 1000Can Ship Immediately
$ 5.13
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Description

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IS43DR16320D-3DBLI Memory: Application Field and Working Principle

The IS43DR16320D-3DBLI is a dynamic random access memory that belongs to the family of Double Data Rate Synchronous Dynamic Random Access Memories (DDR SDRAMs). This memory takes its place among ICs with 8Mb of capacity and is manufactured by ISSI (Integrated Silicon Solution, Inc.). It has a 166 MHz clock frequency, a 2.5V power supply voltage, and a CAS latency of 2. It is an ideal component for applications that need fast data processing.

This DDR SDRAM can be found in a variety of applications, such as in personal computers, routers and switches, networking systems and embedded systems. In the personal computer field, this memory would be ideal for performing tasks that require intensive data processing, such as video and 3D gaming, multimedia applications and storage servers.

In terms of working principle, this memory works by providing signals to two banks side by side, which are based on an input provided by a system. These signals are then amplified and written on the active banks. One of the biggest advantages of using this device is that it can operate at a higher speed compared to other types of memories.

The IS43DR16320D-3DBLI memory is composed of seven memory devices connected to an output enable circuit and a linear address buffer containing an array of columns and rows. Each row has two banks of DRAM cells, allowing data to be stored in either one or both banks.

Data can be read or written from the memory in some performances with a CAS latency of 2 and a clock frequency of 166 MHz. During data read, the row number along with the column and bank addresses are sent to the memory array. The data is then retrieved from the appropriate row and bank and sent to the output. In the case of write operations, the write data is sent along with the row and column addresses and written into the specified row and bank.

The power consumption of this memory device is 2.5V, making it suitable for applications that require less power consumption. It is also seen as a future-proof technology, as it is able to provide faster access times, making it ideal for applications that require high speed data transfer and manipulation.

In conclusion, the IS43DR16320D-3DBLI memory can be used in various applications due to its high performance and lower power consumption. It is suitable for applications that require intensive data processing, such as gaming and multimedia applications. This memory is composed of seven memory devices and can operate at a clock frequency of 166 MHz and a CAS latency of 2.

The specific data is subject to PDF, and the above content is for reference

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