Allicdata Part #: | 706-1171-ND |
Manufacturer Part#: |
IS43R16160D-6TL |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 256M PARALLEL 66TSOP II |
More Detail: | SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 16... |
DataSheet: | IS43R16160D-6TL Datasheet/PDF |
Quantity: | 1595 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700ps |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
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IS43R16160D-6TL Memory
IS43R16160D-6TL is a DDR SDRAM memory that belongs to Integrated Silicon Solution Inc. (ISSI). It is specifically designed for use in automotive and industrial applications. This memory device provides high-reliability and high-performance, making it a great choice for these applications.
The IS43R16160D-6TL is a Double Data Rate Synchronous Dynamic Random Access Memory. It has a total capacity of 4 Gigabytes and is composed of 64Mx 16-bit wide Synchronous DRAMs internally arranged in 16R x 4 Banks. Furthermore, it has a burst length of 4 and 8, and a CAS Latency of 6.
Moreover, the IS43R16160D-6TL device operates with a voltage range of 1.8V to 2.6V and offers a data transfer rate at 667 Mbps. It has an eight-bit internal data path and a 16-bit external data path. It also has programmable internal banks allowing flexibility in how it is used. Furthermore, it is supported by pipelines on the input and output side of the memory, ensuring that there is no latency when reading or writing large amounts of data.
The IS43R16160D-6TL device also offers improved power consumption over previous DRAM generations. This is achieved through its 16-bit prefetch architecture, which significantly reduces the overall power consumption. In addition, it is built-in with self-refresh and auto-refresh capability to further reduce power consumption.
In terms of the applications and usage of the IS43R16160D-6TL, it has been designed to be used in automotive, industrial and medical applications. In vehicles, the device is used in a variety of applications, such as body-on-board diagnostics, driver assistance systems, and central processing units. In industrial applications, it is used as secondary memory storage for industrial computers that require high performance, high-reliability, and low latency.
In terms of the working principle, the IS43R16160D-6TL is based on the concept of synchronous dynamic random access memory (SDRAM). In this type of memory design, the data is stored and retrieved from memory cells located inside the memory device. When data is written to the memory cell, a signal is sent from the device requesting that the data be written to the cell. Once the requested data is stored in the cell, the information is stored until it is read by the device. When the data is read, the signal controlling the memory cell is sent back to the device with the requested information.
In conclusion, the IS43R16160D-6TL is a reliable and high-performance memory device that is suitable for a wide range of automotive, industrial, and medical applications. The device is based on SDRAM technology and is designed with a 16-bit prefetch architecture to reduce power consumption. In addition, the device is built-in with self-refresh and auto-refresh capability to further reduce power consumption. This makes it a great choice for use in high-performance, high-reliability, and low latency applications.
The specific data is subject to PDF, and the above content is for reference
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IS43TR85120A-125KBLI | ISSI, Integr... | -- | 68 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16128C-3DBLI | ISSI, Integr... | -- | 34 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16128C-25DBLI | ISSI, Integr... | -- | 27 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-25DBLI | ISSI, Integr... | 14.84 $ | 50 | IC DRAM 2G PARALLEL 60TWB... |
IS43TR16128C-15HBLI | ISSI, Integr... | -- | 190 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBL | ISSI, Integr... | 15.23 $ | 137 | IC DRAM 2G PARALLEL 84TWB... |
IS43R16160F-6BLI | ISSI, Integr... | 4.68 $ | 29 | IC DRAM 256M PARALLEL 60T... |
IS43TR81280BL-125JBLI | ISSI, Integr... | 6.95 $ | 50 | IC DRAM 1G PARALLEL 78TWB... |
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IS43LR32640A-6BL | ISSI, Integr... | 11.91 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43LR32640A-6BLI | ISSI, Integr... | 13.1 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43R16160D-6TL | ISSI, Integr... | -- | 1595 | IC DRAM 256M PARALLEL 66T... |
IS43DR16640C-25DBL | ISSI, Integr... | -- | 942 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR16640B-125JBL | ISSI, Integr... | 3.34 $ | 364 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16640BL-125JBL | ISSI, Integr... | 3.44 $ | 479 | IC DRAM 1G PARALLEL 96TWB... |
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IS43DR16640B-3DBLI | ISSI, Integr... | -- | 2630 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR85120AL-125KBL | ISSI, Integr... | -- | 219 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16640B-25DBLI | ISSI, Integr... | -- | 755 | IC DRAM 1G PARALLEL 84WBG... |
IS43TR16128CL-125KBLI | ISSI, Integr... | -- | 556 | IC DRAM 2G PARALLEL 96TWB... |
IS43TR16128B-125KBLI | ISSI, Integr... | -- | 340 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBLI | ISSI, Integr... | -- | 26 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16640B-25DBL | ISSI, Integr... | -- | 432 | IC DRAM 1G PARALLEL 84WBG... |
IS43R16160D-6BL | ISSI, Integr... | 5.26 $ | 9 | IC DRAM 256M PARALLEL 60T... |
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