Allicdata Part #: | IS43TR16256AL-107MBL-ND |
Manufacturer Part#: |
IS43TR16256AL-107MBL |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 4G PARALLEL 96TWBGA |
More Detail: | SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 9... |
DataSheet: | IS43TR16256AL-107MBL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 4Gb (256M x 16) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-TWBGA (9x13) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IS43TR16256AL-107MBL is a type of static random access memory (SRAM) that can be used in a variety of different applications and has a specific working principle.
Application Field
The IS43TR16256AL-107MBL is a fast, low-power semiconductor memory device that can store data even when power is not being supplied. This makes it suitable for use in applications where there may be a need to store large amounts of data but where power is not always available. This can include industrial automation systems, embedded systems, military and aerospace applications, and automotive systems.
The IS43TR16256AL-107MBL is especially well-suited for use in battery-operated devices, as it requires low power to operate. It can also provide reliable operation even if power is lost, meaning that critical data can be stored for later retrieval.
In addition to its low power requirements, the IS43TR16256AL-107MBL has a high speed of access, making it an attractive option for applications where speed is of the essence. For example, in automation systems, quick access to frequently accessed information can be critical to the smooth running of the system. The IS43TR16256AL-107MBL can provide quick access to information with minimal power usage.
Working Principle
The IS43TR16256AL-107MBL is a static random access memory device, meaning that it stores data in a series of static cells. It uses a high-density, non-volatile memory cell technology to provide a high-density memory solution for data storage. The memory cell technology utilizes silicon-on-insulator (SOI) bi-CMOS technology, which allows for high-speed access times.
When power is supplied, the memory cells in the IS43TR16256AL-107MBL are charged up with data, allowing the user to store data. The data stored can then be retrieved at any time when power is supplied. The device is capable of storing up to 128Mbits of data with access times of 45 nanoseconds.
The IS43TR16256AL-107MBL also has built-in error correction circuitry to ensure reliable operation. The device also utilizes multiplexing architecture, which allows for more efficient access to data stored in its memory cell array. This multiplexing architecture also helps to reduce power consumption.
Conclusion
The IS43TR16256AL-107MBL is a static random access memory device that is designed for use in a variety of different applications. Its low-power operation and high-speed access times make it an attractive choice for industrial automation systems, embedded systems, military and aerospace applications, and automotive systems. The device also features error correction circuitry and a multiplexing architecture to ensure reliable operation and reduce power consumption. All these features make the IS43TR16256AL-107MBL an excellent choice for data storage in both static and dynamic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IS43DR86400E-3DBL | ISSI, Integr... | 2.73 $ | 32 | IC DRAM 512M PARALLEL 60T... |
IS43DR81280C-3DBL | ISSI, Integr... | -- | 46 | IC DRAM 1G PARALLEL 60TWB... |
IS43R86400F-5TL | ISSI, Integr... | -- | 43 | IC DRAM 512M PARALLEL 66T... |
IS43R16320F-6TLI | ISSI, Integr... | 6.01 $ | 95 | IC DRAM 512M PARALLEL 66T... |
IS43DR81280C-3DBLI | ISSI, Integr... | 6.2 $ | 30 | IC DRAM 1G PARALLEL 60TWB... |
IS43R86400F-5TLI | ISSI, Integr... | 6.4 $ | 29 | IC DRAM 512M PARALLEL 66T... |
IS43DR16128C-3DBL | ISSI, Integr... | 7.92 $ | 98 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-3DBL | ISSI, Integr... | 8.16 $ | 1000 | IC DRAM 2G PARALLEL 60TWB... |
IS43LD16640C-25BLI | ISSI, Integr... | -- | 57 | IC DRAM 1G PARALLEL 134TF... |
IS43LD32320C-25BLI | ISSI, Integr... | -- | 84 | IC DRAM 1G PARALLEL 134TF... |
IS43TR85120A-125KBLI | ISSI, Integr... | -- | 68 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16128C-3DBLI | ISSI, Integr... | -- | 34 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16128C-25DBLI | ISSI, Integr... | -- | 27 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-25DBLI | ISSI, Integr... | 14.84 $ | 50 | IC DRAM 2G PARALLEL 60TWB... |
IS43TR16128C-15HBLI | ISSI, Integr... | -- | 190 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBL | ISSI, Integr... | 15.23 $ | 137 | IC DRAM 2G PARALLEL 84TWB... |
IS43R16160F-6BLI | ISSI, Integr... | 4.68 $ | 29 | IC DRAM 256M PARALLEL 60T... |
IS43TR81280BL-125JBLI | ISSI, Integr... | 6.95 $ | 50 | IC DRAM 1G PARALLEL 78TWB... |
IS43TR82560BL-125KBLI | ISSI, Integr... | 9.32 $ | 39 | IC DRAM 2G PARALLEL 78TWB... |
IS43LR32640A-6BL | ISSI, Integr... | 11.91 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43LR32640A-6BLI | ISSI, Integr... | 13.1 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43R16160D-6TL | ISSI, Integr... | -- | 1595 | IC DRAM 256M PARALLEL 66T... |
IS43DR16640C-25DBL | ISSI, Integr... | -- | 942 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR16640B-125JBL | ISSI, Integr... | 3.34 $ | 364 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16640BL-125JBL | ISSI, Integr... | 3.44 $ | 479 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16128B-15HBL | ISSI, Integr... | 4.31 $ | 152 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16640B-3DBLI | ISSI, Integr... | -- | 2630 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR85120AL-125KBL | ISSI, Integr... | -- | 219 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16640B-25DBLI | ISSI, Integr... | -- | 755 | IC DRAM 1G PARALLEL 84WBG... |
IS43TR16128CL-125KBLI | ISSI, Integr... | -- | 556 | IC DRAM 2G PARALLEL 96TWB... |
IS43TR16128B-125KBLI | ISSI, Integr... | -- | 340 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBLI | ISSI, Integr... | -- | 26 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16640B-25DBL | ISSI, Integr... | -- | 432 | IC DRAM 1G PARALLEL 84WBG... |
IS43R16160D-6BL | ISSI, Integr... | 5.26 $ | 9 | IC DRAM 256M PARALLEL 60T... |
IS43TR16128B-125KBL | ISSI, Integr... | -- | 389 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16320E-3DBLI | ISSI, Integr... | 5.08 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR16512B-125KBL | ISSI, Integr... | 16.77 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512B-125KBLI | ISSI, Integr... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512BL-125KBL | ISSI, Integr... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512BL-125KBLI | ISSI, Integr... | -- | 2411 | IC DRAM 8G PARALLEL 96FBG... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...