IS43LR16800F-6BL Allicdata Electronics
Allicdata Part #:

IS43LR16800F-6BL-ND

Manufacturer Part#:

IS43LR16800F-6BL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 60TFBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 128Mb (8M x 16) Par...
DataSheet: IS43LR16800F-6BL datasheetIS43LR16800F-6BL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 128Mb (8M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x10)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IS43LR16800F-6BL is a computer memory component, specifically a type of Dynamic Random Access Memory, or DRAM. DRAM is a type of semiconductor memory which stores a large amount of data as binary digits for later use. This type of memory is commonly used for computing applications such as personal computers, servers and gaming consoles.

The IS43LR16800F-6BL provides an array of memory cells, organized as a matrix of rows and columns. Each cell contains a small amount of electric charge that can be used to store binary data. The charge is stored in a transistor-based memory cell and can be quickly accessed. Each memory cell can hold either a digit of \'1\' or \'0\', depending on the level of the stored electric charge. Data is read from the array by monitoring the current that passes through each cell. Data can also be written to the memory array by changing the level of the electric charge in each cell.

The IS43LR16800F-6BL is suitable for a range of applications, including use in personal computers, servers, supercomputers, and mobile devices. Its small form factor also makes it suitable for use in embedded systems and in space-constrained or cost-sensitive applications, such as gaming consoles. Its large capacity and high performance also makes it suitable for use in mission-critical and demanding applications, such as military and aerospace systems.

The IS43LR16800F-6BL is designed to combine fast random access time with low power consumption and a high degree of reliability. The device’s on-chip advanced error-correction code (ECC) ensures data integrity, while its row and column architecture ensures high performance even in applications with large memory blocks. The memory device also uses integrated temperature sensors to ensure the temperature remains within operating specifications. Its self-refresh feature helps to reduce power consumption when dynamic bit mapping is enabled.

The IS43LR16800F-6BL is a versatile and feature-rich DRAM, making it an ideal solution for a wide range of applications. Its high capacity and low power consumption make it suitable for use in mobile and embedded applications, while its superior performance and reliability make it suitable for demanding mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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