IS43DR86400D-25DBLI Allicdata Electronics
Allicdata Part #:

IS43DR86400D-25DBLI-ND

Manufacturer Part#:

IS43DR86400D-25DBLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 60TWBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 40...
DataSheet: IS43DR86400D-25DBLI datasheetIS43DR86400D-25DBLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)
Description

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Memory is a crucial component of every computer system ICT infrastructure, and IS43DR86400D-25DBLI is one of the most popular memory technologies developed in the recent years. The product is a synchronous dual-port memory consisting of 8M bits, and is intended for usage in applications such as networking, storage, communications and embedded systems.

Application field

IS43DR86400D-25DBLI is intended for use in systems with distributed architecture, in which communication between processors and external memory is taken place over a bus. In addition, the memory is featured in systems with advanced memory protection mechanism, such as those typically used in automotive and industrial control systems. This ensures that both the contents of the memory and the processor are protected against unauthorized access and manipulation.

IS43DR86400D-25DBLI is suitable for applications requiring high data transfer rates, or need support for multi-threading or distributed memory access. It is also suitable for applications where low power and high speed is a key factor. Furthermore, the memory can be employed in systems where a higher memory bandwidth is desired, or when multiple systems need to be simultaneously read and written.

Working principle

IS43DR86400D-25DBLI uses a synchronous dual-port design, which operates both efficiently and reliably. To guarantee the efficient usage of the memory, the clock speed, row and column size are continuously adjusted in accordance to the commands submitted by the user. Furthermore, the memory can be programmed to react to read and write commands simultaneously, which allows for higher flexibility and speed of memory operations.

The memory is setup in a way that it can be accessed from both its ports at the same time, which means that applications requiring multiple connections can be handled. The dual-port design also has an added benefit in cases of system memory stores, as the memory size is doubled. This makes it possible to access memory blocks quicker, making the system more efficient.

IS43DR86400D-25DBLI has a wide range of features, including error correction, chip count, power start up and delta reset keys. These features are designed to ensure that the memory functions securely and efficiently in all types of applications requiring a reliable memory solution.

Conclusion

In conclusion, IS43DR86400D-25DBLI can be reliably employed as a dual-port memory in a wide range of applications. Its synchronous data layout enables an efficient and versatile memory solution with multiple connections, ensuring a high data transfer rate and memory bandwidth. In addition, the memory is also suitable for system memory stores, providing a flexible and secure solution for the user.

The specific data is subject to PDF, and the above content is for reference

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