IS43LD32640B-25BPL Allicdata Electronics
Allicdata Part #:

IS43LD32640B-25BPL-ND

Manufacturer Part#:

IS43LD32640B-25BPL

Price: $ 8.06
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 2G PARALLEL 400MHZ
More Detail: SDRAM - Mobile LPDDR2-S4 Memory IC 2Gb (64M x 32) ...
DataSheet: IS43LD32640B-25BPL datasheetIS43LD32640B-25BPL Datasheet/PDF
Quantity: 1000
168 +: $ 7.33411
Stock 1000Can Ship Immediately
$ 8.06
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Description

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IS43LD32640B-25BPL is a type of static random access memory (SRAM) component. It is manufactured by Integrated Silicon Solution, Inc. (ISSI). This component has a 256K x 16-bit memory with a dual-port architecture, making it suitable for applications requiring bidirectional data transfers or simultaneous access from two masters.

The IS43LD32640B-25BPL is a low-power SRAM component that is offered in a small pin-count (169-ball) BGA package. This component is capable of operating at temperatures ranging from -40°C to 85°C and has an extended supply voltage range from 1.5V to 3.3V. It also features an auto power down mode, which reduces power consumption automatically when the device is not being accessed. This mode can be used to increase battery life in portable applications.

The IS43LD32640B-25BPL SRAM component is mainly used in embedded systems. This type of system requires the ability to access data quickly and in a very efficient manner. The device can act as a memory cache to ensure smooth and fast access of data, which can result in improved system performance. It can also be used to store non-volatile data, such as firmware code, configuration settings, and operating parameters.

The IS43LD32640B-25BPL SRAM chip is also useful for applications requiring buffer memory. Its dual-port architecture allows simultaneous access from two masters, allowing the data to be served quickly in order to reduce latency. The chip can also be used for back-up memory. With its low-power operation and long-term data retention, it makes an ideal choice for applications requiring a reliable memory solution.

In terms of its working principle, the IS43LD32640B-25BPL SRAM module has two linear bit-lines and two clock lines. When data is written to the device, the voltage on the two bit-lines is determined by the two clock lines. The data is then stored in a cell and latch, with the latch being reset once the voltage on the bit-lines is changed. To read data, the write voltage is sent through the two bit-lines, which causes the latch to open and move the data onto the lines. This data can then be read back by the device.

The Compact IS43LD32640B-25BPL memory module is an ideal choice for many embedded applications due to its high performance and low power consumption. The module\'s dual-port architecture allows for simultaneous data access from two masters, providing quick and reliable data access for increased system performance. With the device\'s extended temperature and voltage range, the module can be used in a wide range of applications, making it an all-around reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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