IS43LR32400G-6BLI Allicdata Electronics
Allicdata Part #:

IS43LR32400G-6BLI-ND

Manufacturer Part#:

IS43LR32400G-6BLI

Price: $ 4.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 90TFBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 128Mb (4M x 32) Par...
DataSheet: IS43LR32400G-6BLI datasheetIS43LR32400G-6BLI Datasheet/PDF
Quantity: 1000
240 +: $ 3.96806
Stock 1000Can Ship Immediately
$ 4.37
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IS43LR32400G-6BLI is a type of memory that is used in multiple devices, such as computer systems, digital cameras, audio recorders, and consumer electronic devices. This short article will explore its application fields and principles of operation.

Application Fields

This type of memory is used in applications where high-speed data transfer and storage is required, such as in cellular phones, digital cameras, and computer systems. Additionally, these chips can be used for data caching in computer systems as well as for storing audio and video files in consumer electronics applications. IS43LR32400G-6BLI chips are also used in some advancements being made in robotics and artificial intelligence.

Working Principle

This type of memory stores data in rapid response synchronous dynamic random-access memories, or SDRAMs. They are synchronous in that the instruction cycles and data transfers are synchronized to a clock.

The data is stored in a non-volatile state in cells that consist of capacitors and transistors. The capacitors hold the electric charge associated with the data while the transistors are used to both read and write to the cells.

With the help of row decoders and column decoders, each cell can be individually accessed and read or written to. This is known as DRAM (Dynamic Random Access Memory) architecture and is the technique used by IS43LR32400G-6BLI chips.

The speed of operation of this type of memory depends on the number of transistors and other factors such as the size of the caches, the number of SDRAMs and the frequency of the clock.

Overall, IS43LR32400G-6BLI chips are used for high-speed operations in multiple applications, such as in computers and consumer electronics. This is due to their non-volatile nature and their synchronous dynamic random-access memory architecture, which allows them to store and access data quickly and efficiently.

The specific data is subject to PDF, and the above content is for reference

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