IS43R16160F-5TL Allicdata Electronics
Allicdata Part #:

IS43R16160F-5TL-ND

Manufacturer Part#:

IS43R16160F-5TL

Price: $ 2.08
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 20...
DataSheet: IS43R16160F-5TL datasheetIS43R16160F-5TL Datasheet/PDF
Quantity: 1000
432 +: $ 1.89237
Stock 1000Can Ship Immediately
$ 2.08
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

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IS43R16160F-5TL Memory Application Field and Working Principle

IS43R16160F-5TL is a type of DRAM (Dynamic Random Access Memory) offered by the company ISSI (Integrated Silicon Solution Inc.). It belongs to the category of asynchronous SRAM (Static Random Access Memory), which is optimized for mobile and portable applications. This type of memory is designed for low-power applications. It is based on a CMOS (Complementary Metal-Oxide Semiconductor) technology for power and performance efficiency.

In it’s application field, IS43R16160F-5TL is used for storing data in mobile phones, tablets, and laptops, among other electronic devices. It is suitable for medium and low-end applications. The most common application of IS43R16160F-5TL is to provide an increase in data storage capabilities. Apart from portable devices, it can also be used in embedded compact systems, such as remote devices, security systems, and home automation.

Regarding the working principle of IS43R16160F-5TL, this type of memory has a synchronous I/O port for reading and writing data. It is operated by a logic process called static refresh, which helps preserve the contents of the memory when the device is inactive. It also has advanced data protection techniques to prevent data loss due to power failure or other unexpected incidents. Moreover, the memory has a self-test feature which enables applications to verify the integrity of their data before storing or distributing it.

IS43R16160F-5TL is organized in an 8-bit wide data bus, and comes with various features including write protection, on-die termination, and low-power modes. It is provided in a 8 Pin TSOP (Thin Small Outline Package) or a 20 Pin TSSOP (Thin Shrink Small Outline Package) package. The minimum single supply voltage of IS43R16160F-5TL is 2.7 Volts, with a maximum operating temperature of 85°C. The memory can read and write data in both asynchronous and synchronous burst modes.

In summary, IS43R16160F-5TL is a type of DRAM (Dynamic Random Access Memory) designed for low-power applications. It is usually used in mobile phones, tablets, laptops and other portable electronic devices as well as industrial embedded systems. It is organized in an 8-bit wide data bus, and works by a static refresh logic process. It also has advanced data protection techniques and a self-test feature. And last, it comes in 8 Pin TSOP (Thin Small Outline Package) or a 20 Pin TSSOP (Thin Shrink Small Outline Package) package, with a minimum operating single supply voltage of 2.7 Volts and a maximum operating temperature of 85°C.

The specific data is subject to PDF, and the above content is for reference

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