
Allicdata Part #: | IS43R16320D-6BL-TR-ND |
Manufacturer Part#: |
IS43R16320D-6BL-TR |
Price: | $ 5.53 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 512M PARALLEL 60TFBGA |
More Detail: | SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 16... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 5.02539 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700ps |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-TFBGA (8x13) |
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IS43R16320D-6BL-TR is a type of memory known as a synchronous dynamic random access memory (SDRAM). It is used in many consumer and commercial applications, including computing, digital audio/video, and consumer electronics. This memory is quite fast and has relatively low power requirements. It is also relatively inexpensive, making it ideal for use in consumer electronics products.
The IS43R16320D-6BL-TR is a synchronous DRAM, meaning that it can access data on each clock cycle. It has a clock frequency of 100 to 133MHz, with a burst length of four. It is capable of interleaving four banks, allowing data to be accessed in a sequence of four prior to a refresh cycle being initiated. Additional operating parameters for this memory include CAS latency support for 3, 2.5, and 2, as well as an auto refresh cycle. It also features a self-refresh mode, allowing it to save power by individually refreshing a bank at a time.
A SDRAM utilizes a modified form of dynamic RAM (DRAM). It has been designed to remove the need to refresh memory cells through the use of a digital system clock. This clock allows the memory controller to time access to variables. The system also reduces power consumption and increases speed of operation when compared to non-synchronous DRAMs.
The IS43R16320D-6BL-TR is constructed in a six-transistor, single-transistor cell architecture. This allows it to be smaller than a standard four-transistor cell. This type of memory is designed to utilize a multiplexed address bus to reduce pin count and enable smaller packages. Additionally, it can high-speed burst data with minimal overhead.
The IS43R16320D-6BL-TR works by providing a timing signal to all the memory cells on each clock cycle. Data is then sent to or from the memory data bus. As the memory cells contain multiple transistors, all the data from a single memory cell or “byte” can be transferred within a single clock cycle. As the SDRAM is refreshing each cell during each cycle, it is important that all the data on the bus is not corrupted. Error correcting codes and parity bits are used to ensure this.
As a result, the IS43R16320D-6BL-TR is an efficient, reliable, and economical memory solution. Its low power consumption and high efficiency make it ideal for use in consumer electronics products. The IS43R16320D-6BL-TR also has excellent read/write capability and can interleave four banks, allowing data to be accessed sequentially prior to a refresh.
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IS43DR16128C-3DBL-TR | ISSI, Integr... | 5.47 $ | 1000 | IC DRAM 2G PARALLEL 84TWB... |
IS43TR82560C-125KBLI | ISSI, Integr... | 6.69 $ | 1000 | IC DRAM 2G PARALLEL 78TWB... |
IS43LD32640B-18BPLI | ISSI, Integr... | 9.54 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
IS43LR16800F-6BLI-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 60T... |
IS43DR82560B-3DBLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60TWB... |
IS43R16160B-6TLI-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
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IS43LD16128B-18BLI | ISSI, Integr... | 8.96 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
IS43LR16160G-6BLI-TR | ISSI, Integr... | 4.66 $ | 1000 | IC DRAM 256M PARALLEL 60T... |
IS43DR16640B-25DBLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
IS43TR16128BL-125KBLI | ISSI, Integr... | -- | 1000 | IC DRAM 2G PARALLEL 96TWB... |
IS43R16160D-5TLI | ISSI, Integr... | -- | 1000 | IC DRAM 256M PARALLEL 66T... |
IS43DR16320E-3DBLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR16256AL-107MBL | ISSI, Integr... | -- | 1000 | IC DRAM 4G PARALLEL 96TWB... |
IS43DR16160A-3DBLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84T... |
IS43LR32400F-6BLI-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 90T... |
IS43TR16128BL-15HBL | ISSI, Integr... | 4.32 $ | 748 | IC DRAM 2G PARALLEL 96TWB... |
IS43R16320F-5TLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 200... |
IS43DR16160A-3DBI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84T... |
IS43LR16800F-6BL | ISSI, Integr... | -- | 1000 | IC DRAM 128M PARALLEL 60T... |
IS43LR32800G-6BLI-TR | ISSI, Integr... | 4.96 $ | 1000 | IC DRAM 256M PARALLEL 90T... |
IS43DR16320D-3DBLI | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR81280B-107MBL | ISSI, Integr... | 5.53 $ | 1000 | IC DRAM 1G PARALLEL 78TWB... |
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IS43R86400D-5TLI | ISSI, Integr... | 6.58 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
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