IS43R16320E-5BLI

• Memory: IS43R16320E-5BLI

From the advancements in modern technology, high density dynamic random access memory (DRAM) chips are in the forefront of memory component device design. IS43R16320E-5BLI is one of the high density DRAM chips recently produced to satisfy the ever expanding market of memory component device technologies. IS43R16320E-5BLI is a 3.2 gigabit Double Data Rate (DDR) Synchronous DRAM (SDRAM). They are small form factor chip and have a 5.0 ns random cycle time.

Given its size, the IS43R16320E-5BLI is designed for a wide range of electronic applications, such as graphic accelerators, video and image processing, graphic editing, home entertainment systems, personal digital assistants (PDAs) and handheld gaming systems. It is also compatible with the majority of computers as they come with a standard 168-pin form factor. This increases the memory capacity to makes them an ideal cost-effective solution for many businesses.

The working principle of IS43R16320E-5BLI is the same as for other DRAM chips. The IS43R16320E-5BLI feature synchronous operation, meaning that it can transfer data from one module to another in one clock cycle. This is often referred to as double data rate or DDR. The IS43R16320E-5BLI also features an extended voltage rating range of between 1.8V and 2.6V, which allows it to provide power savings for devices such as servers and laptops. Additionally, the IS43R16320E-5BLI has a high data transfer rate of 3.2 Gigabits per second (Gbps) and can offer a low-latency operation, something that critical in high performance applications.

The IS43R16320E-5BLI are also featured with an increased chip capacity to 4 bits per cell, an increase from the usual 2. This allows for faster reads and writes, which is an advantage for the application for which the IS43R16320E-5BLI are most commonly used. This chip also features a triple-level cell (TLC) memory architecture which allows for further increases in density and thus further cost savings. As well as this, the IS43R16320E-5BLI also boasts a fast write/read time of 5 ns and a read/write access time of 10 ns, making it highly competitive compared to other DRAM chips on the market.

The IS43R16320E-5BLI DRAM chips are well suited to the ever-changing technical requirements of today’s electronic industry. They offer extended voltage ratings, increased data transfer speeds, increased chip capacity and a low latency operation which make them suitable for applications requiring high performance. With their 4-bit TLC architecture, IS43R16320E-5BLI also provides a cost effective solution for memory component applications.