IS43R86400E-5BLI-TR Allicdata Electronics
Allicdata Part #:

IS43R86400E-5BLI-TR-ND

Manufacturer Part#:

IS43R86400E-5BLI-TR

Price: $ 5.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 200MHZ
More Detail: SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200...
DataSheet: IS43R86400E-5BLI-TR datasheetIS43R86400E-5BLI-TR Datasheet/PDF
Quantity: 1000
2500 +: $ 5.03567
Stock 1000Can Ship Immediately
$ 5.54
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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IS43R86400E-5BLI-TR memory is a type of integrated circuit memory technology used by businesses and individuals. It is designed to store data in a non-volatile way, meaning that once the memory has been written to, it will remain unchanged until its contents are changed by the user. This makes IS43R86400E-5BLI-TR memory ideal for applications where reliable data retention is required.

Application Field

IS43R86400E-5BLI-TR memory has been widely adopted across the whole industry. It is commonly used in industrial control systems and embedded systems, where its non-volatility makes it a good choice for keeping data that needs to be stored for long periods of time. It is also used in consumer devices such as digital cameras and smartphones for storage, as well as for driver updates and firmware changes.

The high density of IS43R86400E-5BLI-TR memory also makes it an attractive choice for high capacity data storage applications, such as in servers and enterprise systems. The small form factor of this type of memory also makes it a popular choice for small form factor computers and other low power applications.

Working Principle

IS43R86400E-5BLI-TR memory is based on a static RAM (SRAM) design, meaning that it does not require periodic refresh cycles to store data. Instead, the memory cells are arranged on a grid pattern with each cell storing a single bit of information. This arrangement allows the memory to be operated at speeds up to 133MHz, providing quick and reliable data access. Additionally, IS43R86400E-5BLI-TR memory is considered a non-volatile memory, meaning that data stored in its cells will remain intact when power is removed.

The low power requirements of IS43R86400E-5BLI-TR memory make it especially attractive for low power applications. In addition to this, the memory cells are self-timed, meaning that a specific sequence of instructions does not have to be followed when writing to the memory. This self-timing also allows the entire memory array to be read or written quickly, making it possible to access data stored in the memory in a fraction of the time.

IS43R86400E-5BLI-TR memory offers a number of advantages over other types of memory technology. The compact form factor, low power requirements, and fast access times make it an attractive option for a range of applications. Additionally, the non-volatile nature of this type of memory makes it ideal for applications where reliable data retention is required.

The specific data is subject to PDF, and the above content is for reference

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