IS43R86400F-6BLI-TR Allicdata Electronics
Allicdata Part #:

IS43R86400F-6BLI-TR-ND

Manufacturer Part#:

IS43R86400F-6BLI-TR

Price: $ 4.80
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 166MHZ
More Detail: SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 166...
DataSheet: IS43R86400F-6BLI-TR datasheetIS43R86400F-6BLI-TR Datasheet/PDF
Quantity: 1000
2500 +: $ 4.35740
Stock 1000Can Ship Immediately
$ 4.8
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

IS43R86400F-6BLI-TR is a cutting-edge memory device designed and developed by one of the pioneers of memory technology, Interlabs. As a highly distinguished memory product, it is widely used in many fields such as industry, transportation and entertainment.

IS43R86400F-6BLI-TR is specially designed to provide significantly higher performance and reliability with lower power consumption than traditional memory products. It is based on the advanced 6-layer single layer architecture which reduces the electrical capacitance and maximizes chip performance. Moreover, it adopts a wide range of BiCMOS technology to further reduce power and noise, resulting in improved data transmission and system stability.

IS43R86400F-6BLI-TR integrates DRAM and SRAM capabilities, providing superior latency and superior power savings as well. It has high speed access and is capable of random burst rates of up to 540 Mbps. This memory product also features robust error correction and data protection features to maintain data integrity.

In terms of its application field, IS43R86400F-6BLI-TR memory devices are widely used in a range of products, such as consumer electronics, laptops, digital still cameras, game consoles, server units, embedded systems and more. These products are characterized by their superior performance, reliability and power efficiency.

In terms of working principle, the IS43R86400F-6BLI-TR memory device uses a combination of DRAM and SRAM technology. With this technology, it is capable of offering superior latency and superior performance with low power consumption. It utilizes advanced DRAM control mechanisms to control the access times and achieve higher performance. Furthermore, it uses 6-layer single layer architecture, BiCMOS technology and error correction codes to ensure consistency of data and minimize errors.

IS43R86400F-6BLI-TR is the latest generation of memory products and it is considered to be one of the most innovative and reliable memory devices available on the market. It is a highly sought after product due to its superior performance, low power consumption, and its robust error correction and data protection features.

The specific data is subject to PDF, and the above content is for reference

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