IS43TR16128B-125KBLI-TR Allicdata Electronics
Allicdata Part #:

IS43TR16128B-125KBLI-TR-ND

Manufacturer Part#:

IS43TR16128B-125KBLI-TR

Price: $ 6.06
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 2G PARALLEL 96TWBGA
More Detail: SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 80...
DataSheet: IS43TR16128B-125KBLI-TR datasheetIS43TR16128B-125KBLI-TR Datasheet/PDF
Quantity: 1000
1 +: $ 6.06000
10 +: $ 5.87820
100 +: $ 5.75700
1000 +: $ 5.63580
10000 +: $ 5.45400
Stock 1000Can Ship Immediately
$ 6.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)
Description

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IS43TR16128B-125KBLI-TR is a type of memory device manufactured by ISSI. It is a 128K x 16 dual rank DDR4 SDRAM module, with a speed of 800 MHz and a CL of 17. This memory device is typically used in server, desktop PC and embedded applications.

The 16128B-125KBLI-TR consists of a total of 1024 individual, 16-bit DRAM chip components. It also has a 64-bit interface, allowing it to be connected to two memory controllers such as a motherboard, server or embedded controller. Furthermore, it is also capable of continuing operation even if a single chip fails, due to its additional Rank protection features.

The DRAM chips are organized into 8 banks, each of which is composed of 8 rows and 8 columns. The 16128B-125KBLI-TR operates in a synchronous mode, meaning that new data will only be accepted when a clock signal is present. When the clock signal is present, it must also have the correct phase and frequency. This is to ensure that data is written or retrieved from the correct memory location.

The operation of the 16128B-125KBLI-TR follows a specific sequence or protocol for the reading and writing of the data stored within its DRAM cells. Firstly, when a command is issued to read or write data, the memory controller proceeds to activate the appropriate row, followed by the column address of the data cell. Once the correct address is decoded, the data bit is retrieved and sent out on the output data pin.

Once the data is written to the memory, it is held until the next command is received. Writing data to the 16128B-125KBLI-TR requires slightly different steps than reading. After the row and column address is decoded, the write data must be placed inside the write data register, after which the WRITE command must be issued. After the write data is received and acknowledged, the same data is placed inside the DRAM cell, allowing for future reads to be retrieved accurately.

The device also has built in programmable Refresh Rates, allowing it to maintain its data integrity over time. In order to keep the data consistent, the Refresh Signal will allow the 16128B-125KBLI-TR to continually refresh the data inside its memory banks. This is managed by the memory controller and can be adjusted depending on the specific requirements of the data.

Overall, the 16128B-125KBLI-TR is an industry standard SDRAM module that offers efficient means of storing and retrieving data. Its two-rank protection, synchronous operation and programmable refresh cycles allows it to offer an excellent level of data storage and retrieval, making it suitable for various server, desktop PC and embedded applications.

The specific data is subject to PDF, and the above content is for reference

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