IS43TR16640A-125JBL Allicdata Electronics
Allicdata Part #:

IS43TR16640A-125JBL-ND

Manufacturer Part#:

IS43TR16640A-125JBL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 1G PARALLEL 96TWBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800...
DataSheet: IS43TR16640A-125JBL datasheetIS43TR16640A-125JBL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)
Description

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The IS43TR16640A-125JBL is a type of memory commonly used in today’s electronics. It is a 4M-bit ONFi serial NAND Flash memory device that is designed for performance, compatibility and long-term reliability. This device is capable of fast random read and write operations, making it ideal for various applications such as digital still cameras, smart phones, and tablets. Moreover, it also offers high operational speed, low power consumption, and small package size. This article will explore the application field and working principle of IS43TR16640A-125JBL memory.

The IS43TR16640A-125JBL memory is suitable for a number of applications. These include digital cameras, multimedia players, PDA’s, mobile phones and embedded systems. This device is also used in data storage devices such as USB flash drives, SD cards and CompactFlash cards. Additionally, this memory can also be used in automotive and industrial applications, as well as in medical devices, network appliance and smartphone/tablet applications.

When it comes to its working principle, the IS43TR16640A-125JBL memory is based on the ONFi (Open NAND Flash Interface) standard. This standard allows for a higher degree of device-to-device compatibility, improved performance and compatibility with legacy products. The device is organized into 16 pages of 256 words each, and can be operated in either write-through or write-back mode. In write-through mode, data can be written to a page and then another page can be written without needing to first erase the previous page. In write-back mode, data can be written to a page and then erased before writing to the next page.

The IS43TR16640A-125JBL memory offers a number of features that make it ideal for various applications. It has an operating range of -40°C to + 85°C, making it suitable for usage in a wide range of markets and temperatures. It also has an endurance rating of up to 10,000 program/erase cycles, which ensures reliability and performance over the long term. The device also has an enhanced ECC engine, which provides continuous real-time correction of up to 6 bytes correctable errors per 2K byte block, ensuring high reliability and data integrity. Furthermore, it has a standby current of 25µA, a program/erase current of 400mA/400mA and a data retention of 1 month at +25°C.

The IS43TR16640A-125JBL memory is an ideal solution for high performance, long-term reliability and compatibility. It has a wide range of applications and offers features such as an operating range of -40°C to +85°C, an endurance rating of 10,000 program/erase cycles and an enhanced ECC engine. This makes it suitable for a variety of markets and applications, while also guaranteeing data integrity and reliability.

The specific data is subject to PDF, and the above content is for reference

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