IS45S16100C1-7TLA1

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	16Mb (1M x 16)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	50-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	50-TSOP II

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IS45S16100C1-7TLA1 Memory

The IS45S16100C1-7TLA1 is a high-capacity, low-cost static RAM device, manufactured using Powerchip Semiconductor Corporation’s advanced CMOS technology. It is a 1M-bit (128K × 8bits) device, organized in 16 row x 8 columns, with on-board autoselect. It has high speed, low power consumption and is a commonly used memory device in the consumer electronics industries.

Application Field

The IS45S16100C1-7TLA1 is widely used in consumer electronics products such as digital cameras, media players, MP3 players, digital video recorders, and GPS devices. It is suitable for low-power, high-speed data storage and retrieval applications, providing fast read access to stored data.In addition to consumer electronics, it is also finding wide application in data-recording systems, portable medical devices, wireless communication systems and automotive systems. This device is designed for use in aggressive, space-constrained applications and offers high performance, low power consumption and robust operation.

Working Principle

IS45S16100C1-7TLA1 static RAM (SRAM) is composed of multiple transistor cells that act as the memory unit. Each memory cell is composed of two transistors and a connecting inverter. The transistors used are typically four or six-terminal MOSFETs (metal-oxide-semiconductor field-effect transistors).When power is initially applied to the SRAM, data must be stored into the memory cells. Data is stored in the cells by changing the amount of charge that is stored on the gate. This can be done by either precharging the gates to a level between the two threshold voltages or by setting the terminal voltage of one of the transistors.In static RAM, there are no moving parts, thus it is highly reliable and does not suffer from any mechanical wear and tear associated with moving components. Furthermore, SRAM does not require a continuous current flow to hold the data and is consequently more power-efficient as compared to dynamic RAM (DRAM) which requires a constant power supply to write data in the memory.

Conclusion

In conclusion, IS45S16100C1-7TLA1 is a popular memory device for a variety of consumer electronics, medical and automotive applications. It is designed to offer fast read access to stored data, low power consumption and robust operation. IS45S16100C1-7TLA1 SRAM is composed of multiple transistor cells that act as the memory unit and provide reliable storage and retrieval of data without mechanical wear and tear.

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