IS45S16320D-7CTLA2

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	512Mb (32M x 16)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.4ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	54-TSOP II

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Introduction

IS45S16320D-7CTLA2 is a static random access memory, commonly known as SRAM, that is capable of holding 16,320 bits of data.It is an integrated circuit composed of many small transistors, capacitors, and resistors all housed on a small silicon chip, functioning as a memory storage device.This kind of SRAM are primarily used in applications where speed, reliability and long-term data retention are required.Some of these application fields include automobile, aviation, consumer and industrial electronic products, health and medical products, security, military and communications applications.

Construction

The memory cell of IS45S16320D-7CTLA2 is made up of two cross coupled inverters, which form a bistable latch. This configuration of inverters enables the cell to store and retain one bit of data. To do this, one of the two inverters must be in a "stuck at 0“ state, and the other in a "stuck at 1" state. Depending on the data stored on the cell, the output of the cell will maintain this same pattern by supplying the necessary power to each of the inverters.

Working Principle

IS45S16320D-7CTLA2 works on the principle of “Read and Write” instruction. During a “Read” cycle, the appropriate column address is first applied to the column address input, while the proper row address is applied to the row address input. When the address is read, the corresponding data stored in the memory cells of the given row will be activated and output as the data bits. The memory cells maintain the data value until either the contents of the cell are modified or the power to the chip is lost. During a “Write” cycle, the proper column address is first applied to the column address input, while the proper row address is applied to the row address input. At this point, the data bits are applied from the data input and stored into the corresponding cells. The data stored in the cell will be maintained until either the contents of the cell are modified or the power to the chip is lost.

Benefits

The IS45S16320D-7CTLA2 SRAM provides a wide range of benefits for its users. Firstly, it has lower power consumption than other SRAMs. This low power consumption allows this kind of SRAM to operate in mobile and handheld applications. Secondly, in comparison with DRAM, SRAM enables faster data access and data transfer speed, making this ideal for applications that need to perform quickly and accurately. Furthermore, its higher storage capacity means it can store larger amounts of data compared to other SRAMs. Ultimately, this SRAM has an improved power-down recovery time compared to other SRAMs, which makes it ideal for applications that require a quick restoration of data upon return of power.

Conclusion

IS45S16320D-7CTLA2 is a type of SRAM which has numerous benefits for its users. These include lower power consumption, faster data access, higher storage capacity, and improved power-down recovery time. These benefits make this SRAM ideal for a variety of applications. It’s a perfect choice for any application that needs speed, reliability and long-term data retention.

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