IS45S16160G-7CTLA2-TR Allicdata Electronics
Allicdata Part #:

IS45S16160G-7CTLA2-TR-ND

Manufacturer Part#:

IS45S16160G-7CTLA2-TR

Price: $ 5.75
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5...
DataSheet: IS45S16160G-7CTLA2-TR datasheetIS45S16160G-7CTLA2-TR Datasheet/PDF
Quantity: 1000
1500 +: $ 5.22066
Stock 1000Can Ship Immediately
$ 5.75
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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Memory is a type of electronic circuit board device used to store data on the computer, and IS45S16160G-7CTLA2-TR is an example of such a device. It is a synchronous dual port static RAM integrated circuits produced by ISSI. It has a wide range of applications and is used in various types of settings.

Generally, this device is used for memory applications, including storing program instructions and intermediate data and multimedia storage. It combines fast SRAM access speed, low power consumption and small package size together. It is designed with a special feature that provides an integrated eight-bit multiplexed address/data bus and a separate control function. It has a high throughput and can be used in a variety of applications such as networking, gaming, and industrial automation.

The IS45S16160G-7CTLA2-TR has two read/write port interfaces. Each interface has its own set of controls and address bus, so the device can be used for dual-port access, read-modify-write operations, buffering, and independent data transfers. In addition, it utilizes a synchronous, high-speed architecture with a burst length up to 8 words, making it ideal for high-performance applications.

The working principle of the IS45S16160G-7CTLA2-TR is fairly simple. It is a static RAM chip that uses two memory cells to store each bit of data. The data is stored in the form of cells, which are made up of transistors and capacitors. The transistors switch the state of the cells and the capacitors store the charge representing the data stored.

The IS45S16160G-7CTLA2-TR is also designed to have a low power consumption while still providing high throughput. It is designed with a special feature that allows the device to remain in a standby mode with power consumption as low as 0.1mW. This helps save energy, making the device ideal for battery-powered applications.

Furthermore, the memory device is designed with a variety of features to ensure reliable operation. It features a built-in track and hold circuit with a standard output hold time of 7.5ns and a maximum output hold time of 15ns. This helps minimize data corruption due to semiconductor process variations. The device also includes static low power modes that reduce power consumption, as well as a temperature-compensated write cycle for reliable data retention over a wide temperature range.

In conclusion, the IS45S16160G-7CTLA2-TR is a highly efficient and reliable memory device that can be used in a variety of settings. It has a wide range of applications and is designed with a number of features to ensure reliable operation. It is optimized for high performance and low power consumption, making it an ideal choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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