IS45S16160J-6CTLA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential component of computer systems and is used for a wide range of purposes from serving as a system’s main memory to supporting the operating system and other applications. The IS45S16160J-6CTLA1 is a high-performance static random access memory (SRAM) device that can be used in a wide range of applications, from gaming and consumer electronics to industrial and military applications.

The IS45S16160J-6CTLA1 is a 16M×16 SRAM device, which means it consists of 16 million 16-bit words, or 16 megabits of memory. It comes in a standard 6.25 mm × 6.25 mm × 0.75 mm Ball grid array package, making it suitable for a broad range of applications. It features a low power consumption of 2.9V to 3.3V, with an operating temperature range from -40°C to +85°C. It is also ECC-supporting and compatible with multiple memory controller standards, making it ideal for high-end embedded system applications.

The innovative IS45S16160J-6CTLA1 is designed for high-performance computing. It has a burst transfer rate of 6.4 GB/s and access time of 10ns, making it one of the fastest SRAM devices in its class. It supports x16 and x32 burst configurations, and its built-in interrupt mechanism allows it to be easily integrated into a variety of systems. Additionally, the device features full-address decoding and bank group interleaving, making it ideal for high-speed designs.

The IS45S16160J-6CTLA1’s innovative working principle is based on its highly advanced design architecture and chipsets. Its operation is based on a unique dual memory bank structure that includes a main memory bank and a backup bank. The main memory bank is used for all the processing operations, while the backup bank is used to store all the information that is needed in case the main memory bank fails. This innovative architecture allows for a highly reliable memory system with a very low power consumption and wide temperature range. Furthermore, the device supports multiple levels of read and write addressing, making it suitable for a variety of applications such as embedded system, aerospace and many more.

In conclusion, the IS45S16160J-6CTLA1 is an innovative and high-performance SRAM device that can be used in a wide range of applications. It features high memory transfer rate, low power consumption and advanced error correction codes, which makes it ideal for embedded systems and high-end applications. Additionally, its robust design architecture and dual bank structure make it one of the most reliable and efficient SRAMs available on the market.

The specific data is subject to PDF, and the above content is for reference