IS45S16320D-6CTLA1-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	512Mb (32M x 16)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.4ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	54-TSOP II

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Introduction to Memory Type IS45S16320D-6CTLA1-TR

Memory type IS45S16320D-6CTLA1-TR is an integrated circuit specifically designed for storing data. It is an example of a type of memory known as static random access memory (SRAM). SRAM is mainly used in applications requiring simultaneous access to multiple data points.

What is SRAM?

SRAM is a type of memory where data points are stored in static arrays that are accessible from any location. It is distinguished from other types of memory such as ROM (read-only memory) or RAM (random access memory) by its ability to store data for longer periods of time even when no power is applied. This is accomplished through the use of “refreshing” voltages.

Application Field of IS45S16320D-6CTLA1-TR

As a type of SRAM, the IS45S16320D-6CTLA1-TR offers several advantages over other memory types. The IS45S16320D-6CTLA1-TR is most commonly used in industrial and safety-critical applications due to its robustness and durability. It is also used in environments where power supply stability and low power consumption are essential.

Working Principle of IS45S16320D-6CTLA1-TR

The working principle behind the IS45S16320D-6CTLA1-TR is similar to that of other types of SRAM. It is composed of two arrays of memory cells arranged in a checkerboard pattern. Each cell can store one bit of data, and is composed of four devices: two referencing transistors and two non-referencing transistors.When data is written to a memory cell, the voltage level of the referencing transistor is switched from low to high to write the data. When data is read from a memory cell, the voltage level of the non-referencing transistor is read to determine the stored data.For the IS45S16320D-6CTLA1-TR, the read and write operations can happen simultaneously. This is due to the fact that the memory cells are arranged in a checkerboard pattern, which allows for simultaneous access to multiple data points.The IS45S16320D-6CTLA1-TR also has the ability to refresh its contents automatically. This is accomplished by a refresh controller, which ensures that all stored data remains valid even when no power is applied.

Conclusion

The IS45S16320D-6CTLA1-TR is a memory type that offers several advantages over other memory types. It is most commonly used in industrial and safety-critical applications due to its robustness and durability. It is equipped with the ability to store data for longer periods of time and can be used in environments where power supply stability and low power consumption are important. The IS45S16320D-6CTLA1-TR is composed of two arrays of memory cells arranged in a checkerboard pattern, allowing for simultaneous access to multiple data points, and is capable of automatically refreshing its contents.

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