IS45S16320F-7TLA1 Allicdata Electronics
Allicdata Part #:

IS45S16320F-7TLA1-ND

Manufacturer Part#:

IS45S16320F-7TLA1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 512Mb (32M x 16) Parallel 143MHz 5...
DataSheet: IS45S16320F-7TLA1 datasheetIS45S16320F-7TLA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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The IS45S16320F-7TLA1 is a high-performance synchronous DRAM memory integrated circuit (IC). This IC is built using a 0.18 μm process and a 512M bit Double Data Rate (DDR) Synchronous DRAM design. It is ideal for applications requiring higher memory density and lower power than traditional single-data rate designs. Its small area, low power operation and cost-effective design make it attractive to a wide range of applications such as digital still cameras (DSC), ultra-compact PCs, cell phones, embedded systems, automotive, and secure embedded systems.

In terms of its application field for IS45S16320F-7TLA1, it is widely used in digital still cameras (DSC), ultra-compact PCs, cell phones, embedded systems, automotive, and secure embedded systems. This diverse range of application fields are made possible due to the IC’s several features. It is designed to provide a high-speed synchronization rate at 266MHz, an ultra-high memory density at 512M bits (64Mbytes), small area, and low power consumtion. This memory IC has both cost and power benefits due to its easily scalable small architecture and advanced power management system. Further, due to its 0.18 μm manufacturing process, it offers low standby power and a low power active mode.

The IS45S16320F-7TLA1 DRAM memory works on the basis of synchronous DRAM. Synchronous DRAM or SDRAM is a type of DRAM memory widely used in modern computing. It operates on a synchronous interface, which means that it synchronizes with the system bus clock. SDRAM works similar to standard DRAM in that it stores data in a capacitor but differs in how it reads and writes data. It is faster than conventional DRAM because it can start a read or write operation immediately instead of having to wait for the refresh cycle to end. Additionally, SDRAM includes some additional features such as multiple internal banks, higher capacities, and higher burst speeds than conventional DRAM. This allows it to support data transfer rates up to 4 times faster than conventional DRAM.

The IS45S16320F-7TLA1 memory IC is designed to follow the industry standard synchronous DRAM memory interface specifications. This DRAM chip supports common features such as burst reads/writes, multiple column decode, auto pre-charged mode, auto refresh mode and Independent Clock (IC) for SDRAM operating. It also supports Advanced Data Out (ADO) mode for data outputs.

In summary, the IS45S16320F-7TLA1 is a high-performance synchronous DRAM memory IC with a range of features that are ideal for a wide range of applications. This memory IC offers a high synchronization rate, ultra-high memory density, small area, and low power consumption. It operates on the basis of standard synchronous DRAM technology and supports common features such as burst reads/writes and multiple column decode. These features make this IC an attractive choice for various systems requiring higher memory density and/or lower power.

The specific data is subject to PDF, and the above content is for reference

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