IS45S32400E-7BLA1

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IS45S32400E-7BLA1 is a special type of memory module developed by Integrated Silicon Solution, Inc. It is primarily intended for use in embedded system applications. The device is constructed of an array of memory cells connected to a power supply, control logic and input and output circuits. The device is designed to provide reliable and high speed operation, with low power consumption.

The IS45S32400E-7BLA1 is a 32-Mbit dynamic random access memory (DRAM) module. The module is housed in a 72-ball BGA package and consists of four 8-Mbit x16-bit chips, fabricated using 13-layer process technology. The device is organized as 2048 rows and 512 columns, with each row divided into 16 banks. The device can support multiple simultaneous data transfers to different banks and multiple simultaneous read/write operations within each bank.

The IS45S32400E-7BLA1 has an asynchronous read cycle time of 10ns and a write cycle time of 15ns. The device has an operating temperature range of -40°C to +85°C. It also features an on-die programmable read-sample timing parameter and auto precharge logic. The device has auto-precharge buffer and address/data randomization features and supports a variety of features such as SDRAMs, EDO, FB-DIMMs, MSE, and DD2.

The primary application fields of the IS45S32400E-7BLA1 are robust embedded applications such as industrial control, automation and instrumentation, robotics, automotive electronics, gaming, telematics, medical equipment, printers and copiers. In these applications, the speed and efficiency of the IS45S32400E-7BLA1 are invaluable.

The working principle of the IS45S32400E-7BLA1 is based on the principles of dynamic RAM. It consists of an array of memory cells arranged in a matrix. The memory cells are composed of capacitors and transistors. The capacitors hold charge, which represent the data stored in the memory cell. The transistors act as switches, controlling the flow of data and providing access to the cells. During a write cycle, data is written to the memory cell and during a read cycle, data is read from the memory cell.

The IS45S32400E-7BLA1 has an asynchronous read cycle time of 10ns and a write cycle time of 15ns. Data can be stored in either SDRAM or RAM format, depending on the application. It also has a low power standby mode and supports a wide range of timing parameters. It also supports various data widths, allowing it to accommodate different data widths without compromising speed. Furthermore, the device has an array of built-in features such as EDO, FB-DIMMs, MSE, and DD2.

The IS45S32400E-7BLA1 is well-suited for robust embedded applications due to its fast operations and low power draw. Its speed and efficiency make it a reliable choice for these applications. Its wide range of features and programmable timing parameters also make it a great choice for a variety of applications.

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