Allicdata Part #: | IS61C256AL-12TLI-TR-ND |
Manufacturer Part#: |
IS61C256AL-12TLI-TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 256K PARALLEL 28TSOP I |
More Detail: | SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para... |
DataSheet: | IS61C256AL-12TLI-TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-TSSOP (0.465", 11.80mm Width) |
Supplier Device Package: | 28-TSOP I |
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IS61C256AL-12TLI-TR Application Field and Working Principle
The IS61C256AL-12TLI-TR is an EPROM (Erasable Programmable Read Only Memory) chip with a capacity of 256K bits. It belongs to the memory category and is used in electronic products such as consumer electronics, industrial automation systems, and aerospace design. The chip offers a wide range of storage options for 8, 16, and 32-bit data in a single package.
Features
The main features of the IS61C256AL-12TLI-TR include:
- 256K bits of storage capacity with 2.7V to 6.2V operating range
- Single 3.3V supply operation
- Standby current of 1µA
- Wide temperature range from -55°C to 125°C
- Two independent programmable address lines, A0 and A1
- Eight read/write data modes allow for multiple address expansions
- Separate /CE and /OE (output enable) pins
Uses
The chip finds widespread use in a wide range of applications such as:
- Internet of Things (IoT) devices
- Industrial automation systems
- Robotics
- Smart home technologies
- Computer motherboards
- Telecommunication systems
- Unmanned Aircrafts
Working Principle
The IS61C256AL-12TLI-TR chip is based on the MOS (metal-oxide-semiconductor) EPROM technology. It uses charge storage at the interface of a floating gate and a MOS capacitor to store data. The MOS capacitor is called a floating gate because its charge does not move or drift. The capacitance is so small that the charges can only store small amounts of data.
The charge storage works on the principle of field effect, wherein a potential difference set between the gate and the substrate resulting in electrons being trapped in the floating gate. This charge trapped in the floating gate is responsible for storing the information. The stored information can be written and erased from the chip using an ultraviolet light source.
The chip is programmed and erased using an ultraviolet light source. First, the content to be written is programmed in the chip using the source, which alters the charge stored in the floating gate of the EPROM and stores the information. To erase the content, the source is activated again, causing the electrons to escape or drift away, resulting in data deletion.
Conclusion
The IS61C256AL-12TLI-TR chip is a versatile and dynamic memory chip that finds extensive use in a variety of applications, mainly in the field of consumer electronics, industrial automation, and robotics. Its working principle is based on the MOS technology and it uses field-effect charge storage to retain data.
The specific data is subject to PDF, and the above content is for reference
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