IS61NLP25618A-200TQLI-TR Allicdata Electronics
Allicdata Part #:

IS61NLP25618A-200TQLI-TR-ND

Manufacturer Part#:

IS61NLP25618A-200TQLI-TR

Price: $ 4.89
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4.5M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 4.5Mb (256K x 18) Par...
DataSheet: IS61NLP25618A-200TQLI-TR datasheetIS61NLP25618A-200TQLI-TR Datasheet/PDF
Quantity: 1000
800 +: $ 4.45038
Stock 1000Can Ship Immediately
$ 4.89
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3.1ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

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The IS61NLP25618A-200TQLI-TR is a memory integrated circuit (IC) that is popularly used in the field of embedded system design and microprocessor design. Memory ICs are critical components used to store program and data in electronic circuits and systems. This IC has a bank structure and offers a variety of features including high speed applications, low power consumption, and a wide temperature range. It is designed for low power consumption, so as to make it an efficient choice for power management applications.

The IS61NLP25618A-200TQLI-TR memory device is composed of two parts: logic and RAM. The logic part of the IC houses an array of logic functions, such as address decoding, refresh control, and the state machine. The RAM portion of the IC consists of an array of SRAM cells connected together in a “bank” structure. The RAM cells are arranged in a grid pattern, with each cell providing a readable and writable bit. The addressing of the SRAM cells is done through word line addressing which is decoded by the logic portion of the IC.

When the IC is powered on, the state machine part of the logic will start to initialize the memory by setting up the address decode and refresh address. The refresh process is done at regular intervals to ensure that the data stored in the SRAM cells is valid. The refresh is done by writing a logic-high value to all address locations input to the IC and is generally done every 64ms.

The IS61NLP25618A-200TQLI-TR supports a variety of applications ranging from small, embedded system design to large-scale processor designs. The IC is ideal for applications where low-power consumption and high-bandwidth access are important. This device is also capable of supporting high-speed transaction rates, allowing it to be used for applications that require real-time data processing.

The IS61NLP25618A-200TQLI-TR is ideal for embedded system applications due to its low power consumption. It is also suitable for high-performance embedded microprocessors since it is capable of supporting high-speed data processing. The device also has wide temperature range making it suitable for use in a variety of climates and operating conditions. In addition, the device is capable of supporting high-speed data transfers, making it suitable for applications requiring real-time data processing.

In summary, the IS61NLP25618A-200TQLI-TR is a low-power consuming memory device which is suitable for a variety of applications ranging from embedded system design to processor designs. The device has a bank structure and utilizes word line addressing for quick access to data. The device supports high-speed transactions, making it suitable for real-time data processing applications. The device has a wide temperature range, making it suitable for many different climates and operating conditions.

The specific data is subject to PDF, and the above content is for reference

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