IS61WV25616BLS-25TLI Allicdata Electronics
Allicdata Part #:

IS61WV25616BLS-25TLI-ND

Manufacturer Part#:

IS61WV25616BLS-25TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS61WV25616BLS-25TLI datasheetIS61WV25616BLS-25TLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The IS61WV25616BLS-25TLI is an advanced high-density CMOS static RAM designed to meet the needs of a wide range of applications. It is ideal for applications requiring large memories, including modern embedded systems, server and enterprise applications, most types of controllers, and many others. This article will provide an overview of its application fields, working principle, and other features.

The IS61WV25616BLS-25TLI is a 256-Kbit static RAM with an asynchronous asynchronous architecture. Its memory block is organized as 16 Kwords x 16 bits with an I/O pin count of 32. It is also capable of operating with either voltage levels of either 2.5V or 1.8V, making it ideal for low-voltage applications. It also has a standby current of only 350μA and a low-power operating mode, making it an ideal choice for energy-sensitive applications.

This chip is especially suited for embedded systems and for use as a storage medium for program instructions and data structures. It is often used in applications such as mobile phones, multimedia devices, and digital television. Its fast access time makes it ideal for high-performance applications, while its low-power consumption makes it an ideal choice for battery-powered devices.

The IS61WV25616BLS-25TLI also has a wide range of additional functions, including write and read protection, HOLD and SUSPEND delays, and self-timed sequential and random read operations. Additionally, it also has an integrated internal write-cycles counter, an error correction code (ECC) protection for single-bit failures, and parity protection for all bits. All of these features provide greater reliability and security for data stored within the device.

The working principle of IS61WV25616BLS-25TLI involves two main operations, the reading and writing of data. Data can be written to the static RAM chip by sending the appropriate data bits to the WRITE input pins. When data is to be read from the chip, the appropriate address bits will be sent to the READ input pins, and the resulting data which appears on the Data Out lines will then be read as a single 16-bit word. The speed at which data can be written and read to the chip is dependent on the chip\'s operating characteristics, such as available Oscillator frequencies and the chip\'s input and output timings.

The IS61WV25616BLS-25TLI offers many advantages that make it ideal for a variety of applications. Its wide operating voltage range and low standby current make it suitable for energy-sensitive applications, its write and read protect and ECC protection ensure reliability and data security, and its fast access time makes it suitable for high-performance applications. Therefore, it is an excellent choice for use in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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