IS61LF12836EC-7.5TQLI

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The IS61LF12836EC-7.5TQLI is a 128KB static random access memory (SRAM) chip manufactured by Integrated Silicon Solutions, Inc. (ISSI). It is a high-performance, low-power consumption device that is intended to be used in commercial, industrial and automotive applications. The IS61LF12836EC-7.5TQLI is built upon ISSI\'s advanced three-dimensional multi-layer cell (TMC) technology and provide enhanced system performance with the industry-proven ISSI ultra-low-leakage devices. In terms of performance, the IS61LF12836EC-7.5TQLI is capable of data transfer rates of 25MHz, making it compatible with 66MHz and 100MHz systems. Its low-power consumption makes it suitable for battery-powered applications. The chip features an integrated low-voltage power-down to 1V for low-power operation and the ability to transition between partial and full Sleep mode for power conservation. The SRAM also offers power-saving features such as self-refresh and deep-sleep which can reduce the device\'s power requirements.The IS61LF12836EC-7.5TQLI also features an integrated ECC mechanism that provides a robust data integrity solution with no additional components required. The ECC feature supports parity and parity/add check bits, as well as an automatic correction of single-bit errors. The SRAM also includes an integrated voltage regulator, allowing the device to operate over a wide range of supply voltages, from +2.7V to +3.6V.The IS61LF12836EC-7.5TQLI is packaged in an 8-pin SOIC-SMT package, making it suitable for space-sensitive applications. The chip also has an integrated write protection function, making it suitable for applications with sensitive data. In terms of working principles, the IS61LF12836EC-7.5TQLI is a static random access memory (SRAM) chip. Unlike dynamic random access memory (DRAM), which requires a constant stream of power to keep data stored in its memory cells, SRAM requires no refreshing. This makes it a good choice for applications that require reliable data retention and where power consumption is a concern. The IS61LF12836EC-7.5TQLI uses an array of SRAM cells, organized in rows and columns, to store data. Each SRAM cell consists of a flip-flop circuit with two stable states, which are used to represent a binary data bit. The content of the cell is determined by the voltage applied to its inputs; a high voltage will set the cell to a binary 1, while a low voltage will set the cell to a binary 0. The data is written to the SRAM cells by applying a specific voltage combination to the cell inputs. The IS61LF12836EC-7.5TQLI is organized into two banks of 64KB each. Each bank has an independent address bus, a common data bus and an associated predecoder. The address bus had 16 address lines, resulting in a total address space of 64KB. The data bus is 8 bits wide and is used to transfer data between the SRAM and the system.In conclusion, the IS61LF12836EC-7.5TQLI is a high-performance, low-power SRAM chip that is suitable for applications such as automotive, industrial, and commercial usage. Its features, including integrated ECC, low-voltage power-down, self refresher and deep-sleep, make it ideal for low-power battery-powered devices. Its array of SRAM cells, organized as rows and columns and located in two independent banks, allows for fast data transfer and reliable storage.

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