IS61C3216AL-12TLI Allicdata Electronics
Allicdata Part #:

IS61C3216AL-12TLI-ND

Manufacturer Part#:

IS61C3216AL-12TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 512K PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 512Kb (32K x 16) Par...
DataSheet: IS61C3216AL-12TLI datasheetIS61C3216AL-12TLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Memory

The IS61C3216AL-12TLI is a DRAM that is about 16 megabits on a SOJ package and is fast page mode. It is suitable for applications that need medium to high memory density, such as embedded systems and personal computers. This type of DRAM operates through an asynchronous interface, which is an interface that does not have a defined clock signal. This means that there can be some variations in system performance.The IS61C3216AL-12TLI provides faster access times than other DRAMs, which enables faster overall system performance. It also has a low power consumption, which makes it suitable for battery-powered applications. The IS61C3216AL-12TLI also has a built-in multiplexed address/data bus and a self-refresh memory feature.The IS61C3216AL-12TLI operation principle is based on a static random access memory (SRAM) technology. This type of memory operates like a typical computer memory with a single address bus for both read and write operations. When a write operation is requested, the data values is stored in the addressed locations in the SRAM. Reading from the SRAM is slightly different, and requires an additional cycle to first request the row of data, and then the column of data.With the IS61C3216AL-12TLI, the control register is used to program various features such as the refresh period and the refresh cycle duration. The rows of the DRAM are continually refreshed, which allows the IS61C3216AL-12TLI to remain in its active state with minimal power consumption. This makes the IS61C3216AL-12TLI well suited for a wide range of applications that require a high density and fast access time, such as real-time embedded systems.

The IS61C3216AL-12TLI is a versatile DRAM solution that can meet the needs of many applications. Due to its low power consumption and fast access times, it is well suited for embedded systems, personal computers, and other applications that require a high memory density. It is also easy to use, and its built-in multiplexed address/data bus and self-refresh memory feature make it a great choice for those applications that need more advanced control over the data stored in the memory. With its efficient design and cost-effective nature, the IS61C3216AL-12TLI is a reliable choice for those looking for a high-density, low-power memory solution.

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