IS61LF25636A-7.5TQLI

IS61LF25636A-7.5TQLI is a memory semiconductor device manufactured by Integrated Silicon Solution Inc. (ISSI) It is a low voltage, low power 256K x 36 bit asynchronous SRAM. The device incorporates a high speed CMOS 6.5ns access time architecture and is organized as 256K words by 36 bits.

This device is mainly used in applications such as digital signal processing, audio processing, telecommunications, computer peripherals and many other applications where high speed and high-density memory is required. The IS61LF25636A-7.5TQLI operates from a single 2.7V to 3.3V power supply and supports both asynchronous read and write operations. The device is packaged in a 52-pin hSBGA package.

The working principle of IS61LF25636A-7.5TQLI is based on the concept of storing information in the form of bits. Bits can be thought of as either a 0 or a 1, representing one of two values, usually binary values. Each bit is stored in the memory and has a specific address so that the data stored in that address can be accessed. This memory device is composed of a series of cells, arranged in a continuous array, each cell containing a bit of data.

The data is accessed by an address bus. Each cell is assigned a unique address, which can be accessed by sending the appropriate address to the memory device. Once the required address is sent, the device will return the data stored in that particular cell. This enables the device to read data from the memory address or to write data to the address. The IS61LF25636A-7.5TQLI can also be used for write operations, with the data being written to the memory address and then stored there.

The IS61LF25636A-7.5TQLI is designed to operate as an asynchronous SRAM, meaning that the data is written to, or read from the memory array without the use of an external clock. This device is capable of operating at a low voltage, using only a 2.7V to 3.3V operating range, which makes it suitable for many battery powered applications. The IS61LF25636A-7.5TQLI is a highly cost-effective solution and offers a high-speed access time of 6.5ns. It is a reliable and efficient memory solution and is capable of handling complex data operations with ease.