IS61LF25636B-7.5TQLI Allicdata Electronics
Allicdata Part #:

IS61LF25636B-7.5TQLI-ND

Manufacturer Part#:

IS61LF25636B-7.5TQLI

Price: $ 8.91
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 9M PARALLEL 117MHZ
More Detail: SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral...
DataSheet: IS61LF25636B-7.5TQLI datasheetIS61LF25636B-7.5TQLI Datasheet/PDF
Quantity: 1000
72 +: $ 8.09410
Stock 1000Can Ship Immediately
$ 8.91
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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IS61LF25636B-7.5TQLI is a kind of non-volatile static random access memory (SRAM) that belongs to the memory family. It is based on the static random access memory (SRAM) technology and provides a read and write speed suitable for a wide variety of embedded applications. It is also suitable for small system designs.

In this type of SRAM, all of the information is stored in the form of a set of cells. Each cell contains a single bit of information which can be accessed by the memory manager. The memory manager is responsible for managing the address bus and various other data bus signals. To access a particular cell in the memory array, the memory manager has to choose a specific address and initiate a read cycle. Then the memory manager will use the address data to retrieve the stored information.

The IS61LF25636B-7.5TQLI also includes several peripheral functions such as an internal data bus, an internal address bus, an internal control bus, and an external data bus that allow the memory manager to communicate with the device. The internal address bus is used to write and read the data while the external bus provides the necessary control signals.

The working principle of IS61LF25636B-7.5TQLI is based on the static random access memory technology. Each cell of the device contains a single bit of information which can be accessed by the memory manager. In order to write data in the memory manager needs to initiate a write cycle using the address data and the control bus. Once the write cycle is initiated, the memory manager will access the desired address cell, set the desired data and then initiate a write verify to confirm that the data was correctly written.

In order to read data from the device the memory manager needs to first access the desired address cell by using the address data, after that the desired data can be read by using the read cycle. The read cycle will initiate the data to be read and sent on the external data bus. The external data bus also carries control signals as necessary to inform the memory manager of the status of the operation.

IS61LF25636B-7.5TQLI is widely used in embedded systems, mobile phones, tablets, multimedia players, automotive audio systems, consumer electronic devices and telecom systems. Its non-volatile nature and lower down time requirement is what makes it the perfect choice where data is concerned. In addition to its general memory applications, it can also be used as a system control unit, or as a data highway hub for sensors or devices. It can also be used in consumer peripherals such as remote controls, gaming systems, or navigation devices.

IS61LF25636B-7.5TQLI is a great piece of memory that can be used to improve the performance of various products without causing any major system redesigning effort. Its easy reinstallation, low cost and low latency make IS61LF25636B-7.5TQLI a preferred choice for many applications. Its non-volatile memory functionality also proves extremely useful in applications where data needs to be retained even when the power is switched off.

The specific data is subject to PDF, and the above content is for reference

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