IS61LPS51218B-200TQLI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous
Memory Size:	9Mb (512K x 18)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	--
Access Time:	3.1ns
Memory Interface:	Parallel
Voltage - Supply:	3.135 V ~ 3.465 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-LQFP (14x20)

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Introduction: Memory

Memory is an electronic device used to store data, typically in the form of binary codes. Memory allows a computer to store and access data quickly, even after shutting down and restarting. Memory is an essential building block of any computer system and can be divided into two main categories: ROM (read-only memory) and RAM (random-access memory). ROM is non-volatile memory and retains its data even when power is removed. RAM, on the other hand, is volatile memory and requires power to store or access its data.

IS61LPS51218B-200TQLI application field and working principle

IS61LPS51218B-200TQLI is a 512K x 18 bit low-power, high-performance CMOS Static RAM. It has been designed to provide a wide range of applications including high-speed buffers, graphics controllers, and high-capacity, low-cost RAM applications. The IS61LPS51218B-200TQLI is fabricated using advanced CMOS technologies, which provides higher speed, higher density, and lower power consumption.The IS61LPS51218B-200TQLI consists of three major components: RAM cell array, address decoder, and control logic. The RAM cell array is the largest part of the core and is composed of 64Kx18 RAM cells. Each RAM cell is configured as a two-transistor non-volatile SRAM cell which is capable of maintaining data storage until power is turned off. The address decoder receives the address inputs and determines which RAM cell must be selected for reading or writing. The control logic is responsible for generating clock, chip select, and write enable signals for reading and writing data to the RAM cell array. The IS61LPS51218B-200TQLI has low power consumption and high performance. It only requires 200mA of active current and 40mA of standby current. This allows for storage of large amounts of data in a light and compact size. The device has a 44-pin thin quad flat package and is wafer level CSP compliant. The IS61LPS51218B-200TQLI has an operating voltage range of 2.7V to 3.6V and can operate at temperatures ranging from -40°C to +85°C.

Conclusion

The IS61LPS51218B-200TQLI is a low-power, high-performance CMOS Static RAM designed for a wide range of applications. It has low power consumption, high performance, and a compact size, making it a great choice for many memory applications. Its wide operating voltage range and temperature range allow for easy integration into many different technology environments. The IS61LPS51218B-200TQLI is an excellent choice for a variety of memory storage applications.

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