IS61LV12816L-10TL-TR Allicdata Electronics
Allicdata Part #:

IS61LV12816L-10TL-TR-ND

Manufacturer Part#:

IS61LV12816L-10TL-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: IS61LV12816L-10TL-TR datasheetIS61LV12816L-10TL-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61LV12816L-10TL-TR is a high-density, low-power Static Random Access Memory (SRAM) device manufactured by ISSI (Integrated Silicon Solution, Inc.). It is most commonly used in personal computers, servers, network routers, and embedded systems due to its superior performance and reliable operation. The SRAM is a type of non-volatile memory, which means that it retains its data even when no power is applied to the device. IS61LV12816L-10TL-TR is a 16K x 8 bit SRAM device, meaning it is capable of storing up to 128kBytes of data.

The IS61LV12816L-10TL-TR consists of a 16K x 8 array of Static Random Access Memory cells. The cell is composed of a single memory cell which consists of two transistors and two capacitors. This configuration is known as a ‘6T’ cell and it is the most common type of SRAM cell used in memory devices. The two transistors are connected in series, with the first transistor providing the access to the cell, and the second transistor providing the storage. The capacitors are used to store the data and maintain their value after power is removed from the device. The IS61LV12816L-10TL-TR can operate at frequencies up to 100MHz, providing fast access to its memory cells.

The IS61LV12816L-10TL-TR supports a number of different applications. It is commonly used in memory-intensive applications such as graphics and video processing, as well as embedded applications like industrial automation and machine control. Its low power consumption also makes it ideal for use in battery-powered portable devices such as handhelds, PDAs and cell phones. Additionally, its ability to retain data after power-down allows it to be used in safety-critical systems like healthcare monitoring, where reliable data storage and retrieval is essential.

The IS61LV12816L-10TL-TR is built using a CMOS process, a type of manufacturing technology that uses low-cost techniques to produce high-performance devices. It has a low power consumption, making it suitable for use in mobile applications and devices that require long battery life. The device also provides a Write Protect feature, allowing the memory contents to be “frozen”, preventing accidental or unintentional modification of the device’s contents.

The IS61LV12816L-10TL-TR has a wide operating temperature range, making it suitable for use in a variety of environments. It also has excellent data retention characteristics and is rated for 20 years of reliable data storage. The device is available in a surface-mount package, making it suitable for surface-mount applications such as printed circuit boards. In conclusion, the IS61LV 12816L-10TL-TR is a highly reliable, low-power memory device suitable for a wide range of applications. Its wide-operating temperature range, low power consumption, and excellent data retention characteristics make it ideal for use in embedded systems and portable applications. The device is also low-cost, making it an economical choice for designers and engineers looking to save money while obtaining high-performance memory.

The specific data is subject to PDF, and the above content is for reference

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