Allicdata Part #: | 706-1033-ND |
Manufacturer Part#: |
IS61LV12816L-10TL |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 2M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para... |
DataSheet: | IS61LV12816L-10TL Datasheet/PDF |
Quantity: | 966 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 2Mb (128K x 16) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3.135 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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The IS61LV12816L-10TL is a low power static read/write memory device specifically designed for low voltage/low power applications. The device is based on a CMOS staticrandom access memory (SRAM) technology and features an access time lower than 200 ns. The device is designed to operate from a single 3.0 Volt power supply and fully meets theLow voltage CMOS requirements set forth in the TIA/EIA-948 specification. The IS61LV12816L-10TL consists of 2K words by 8 bits of static read/write memory organized as 128 Rows by 16 Columns.
IS61LV12816L-10TL application fields
The IS61LV12816L-10TL is suitable for data buffering, low-power code or data storage, or anyapplication where high speed, very low power SRAM is desired. It is also commonly used in embedded systems and control applications such as industrial automation and home automation due to its low power requirements. Additionally, since access to the SRAM is fast (some up to 200 ns), it is sometimes used in applications such as computer clock generators.
IS61LV12816L-10TL working principle
The IS61LV12816L-10TL is a static SRAM that uses CMOS circuitry to achieve very low activepower requirements while allowing very fast access times. The memory is composed of 128rows, each one containing 16 bits. Data is loaded into a row by first setting the address. Then, data is transferred in or out of the active row via the input/output (I/O) pins. The data is stored in the memory array until it is changed by a different address setting. The device does not require a refresh cycle and willreturn the data stored in the addressed row when the row address is set.
The device is accessed via three-state input/output lines that are controlled by an active- lowselect line. The state of the select line dictates whether the I/O ports are enabled to pass data in and out of the device or if they are in high impedance state. Data is written to the device by writing to the selected address while the select is low. Data is read from the device by setting the address and then reading the data while the select is low.
The IS61LV12816L-10TL CAN be used as a low power and low voltage coding or data storage solution. It features a wide range of operating temperatures, fast access times, and can beused in systems with a single 3.0 volt power supply. With its low power requirements and fast access times, it is an ideal solution for applications where low power, small form factor embedded systems are desired.
The specific data is subject to PDF, and the above content is for reference
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