IS61LV25616AL-10TLI Allicdata Electronics
Allicdata Part #:

706-1208-ND

Manufacturer Part#:

IS61LV25616AL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS61LV25616AL-10TLI datasheetIS61LV25616AL-10TLI Datasheet/PDF
Quantity: 1222
Stock 1222Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61LV25616AL-10TLI is a 2M x 8bits CMOS Static RAM, manufactured by Integrated Silicon Solution, Inc. (ISSI). The device is a member of ISSI’s Advanced Low Power (ALP) Family of memory products. It operates from a single power supply voltage in the range of 2.7 volts to 3.6 volts and is available in 16-pin, 10-ball down-sleeve packages. It has an operating temperature range of -40C to +85C and offers industrial temperature ranges of -40C to +100C, -55C to +125C and -70C to +150C.

The IS61LV25616AL-10TLI is primarily used in applications such as smart cards, set-top boxes, storage drives, portable applications, automotive, industrial and medical.

The IS61LV25616AL-10TLI is a low power, high performance, single voltage (2.7V - 3.6V) static RAM. It is manufactured using a 0.35um CMOS process, offers fast access times, low standby current and is designed for non-volatile memory (NVM) applications. The device has an asynchronous interface that does not require a clock signal. Its self refresh mode allows the device to be used in a low power, battery-backed application.

The IS61LV25616AL-10TLI offers an organized memory architecture with a fully static design allowing for quick access time of 1ns. It provides an asynchronous interface that does not require an external clock for operation. All inputs are compatible with standard CMOS and TTL levels. Data is stored in an 8-bit wide static RAM with a total of 2Mbits of addressable memory and two select lines.

The IS61LV25616AL-10TLI provides a high speed write cycle of 25ns JEDEC Standard and requires a minimal number of write cycles per byte (one bit to be written). The device uses an asynchronous page-mode write cycle to minimize read latency. The device has two select lines, one for the upper and one for the lower memory sections. The device also features a standby mode, which allows the device to enter an ultra-low power mode while the system is idle.

The IS61LV25616AL-10TLI is a fully static CMOS device and its advanced low power operation capability provides an efficient solution for a large variety of applications. Its power saving feature allows for extended battery life in embedded systems. The device also offers Self Refresh Mode, which allows for data retention even when the power is off for short periods of time. Additionally, the device is compliant with major standards like JEDEC, PCI-X, etc.

In summary, the IS61LV25616AL-10TLI is an advanced low power, high performance static RAM with a fast access time of 1ns. It is an ideal choice for applications that require low power consumption, high performance and data retention during power off conditions. It is suitable for use in a wide range of applications such as smart cards, set-top boxes, storage drives, portable applications, automotive, industrial and medical.

The specific data is subject to PDF, and the above content is for reference

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