IS61LV2568L-10T

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IS61LV2568L-10T memory is a low-voltage static random access memory (SRAM) that is mostly used for general-purpose applications. The IS61LV2568L-10T family utilizes a single 3.3V power supply and has lower power consumption than traditional 5V SRAM. Theoperating temperature range of the IS61LV2568L-10T memoryis from -40°C to +85°C.

The IS61LV2568L-10T memory is a monolithic CMOS asynchronous SRAM with two I/Os and data mask capabilities. It contains an array of 8K x 8-bit static RAM cells organized as 1K-word x 8-bit groups of memory blocks. The device is fabricated using silicon-gate CMOS technology for highest speed and ensures very low power consumption.

The IS61LV2568L-10T memory device uses a page mode wherein all locations of the page remain accessible as long as the device is in page mode. This page mode allows the device to stay in page until the whole page is selected or the device is deselected. In addition, the device supports higher speed access and burst functions.

The IS61LV2568L-10T memory is mostly used in applications where low power and high speed are needed, such as cellular phones, PDAs, audio/video applications, and embedded systems. It functions as a program memory and data storage element, providing fast and reliable access to data. It also enables design engineers to incorporate additional storage bandwidth, reducing system latency.

In addition, the IS61LV2568L-10T memory can be used as a storage element in systems that require real-time tracking and data monitoring. This device supports high-speed burst operations, which can quickly transfer large amounts of data within a short period of time. This feature makes it ideal for various security systems that need to store and track data in real time.

The working principle of IS61LV2568L-10T memory is quite simple. It contains an array of memory cells that are all controlled by a common semiconductor switch. When the switch is closed, the current flowing through the cell causes it to store information in the form of a binary combination. The presence of a binary combination in the cell represents a logical state of either ‘0’ or ‘1’. This information can then be accessed from the memory cell, processed and transmitted to other connected logic devices.

The IS61LV2568L-10T memory utilizes state-of-the-art technologies to reduce power consumption while providing high speed access. It is an ideal and reliable choice for mobile, embedded and industrial applications where data transfer and storage need to take place quickly and reliably.

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