IS61LV2568L-8TL Allicdata Electronics
Allicdata Part #:

IS61LV2568L-8TL-ND

Manufacturer Part#:

IS61LV2568L-8TL

Price: $ 2.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: IS61LV2568L-8TL datasheetIS61LV2568L-8TL Datasheet/PDF
Quantity: 1000
270 +: $ 2.33140
Stock 1000Can Ship Immediately
$ 2.56
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61LV2568L-8TL is a type of Synchronous Static Random Access Memory (SRAM) product developed by Integrated Silicon Solution, Inc., a semiconductor company established in San Jose, California, in 1995. This particular SRAM chip operates with a 3.3V power supply and has a typical capacity of 128 kilobits (1024 kilobytes).

The IS61LV2568L-8TL\'s application field includes digital storage systems and electronic equipment that requires relatively fast memory read and write speed. For example, the chip can be used as temporary or primary storage device in handheld digital devices or computers, as internal stack memory for programmable logic controllers (PLC), or as secondary storage device in remote access devices. In short, it is suitable for any device requiring large, fast data throughput.

The working principle of IS61LV2568L-8TL is based on the concept of single transistor dynamic RAM (DRAM) cells. It uses a matrix of carefully arranged cells which consist of two transistors and a single storage capacitor. When the memory cells need to operate, an electric current is passed through the matrix, which changes the state of the transistors and charges the capacitor. This process results in the cells being either in the "on" or "off" states.

The IS61LV2568L-8TL also uses a divided architecture which improves the access speed of the SRAM chip by dividing it into independent blocks. This allows for simultaneous read and write operations to different blocks without the need to wait for one operation to complete first. This reduces the access time of the SRAM to a significantly lower level.

Other features of the IS61LV2568L-8TL include support for page mode operations, which allows application developers to write software code which takes advantage of the chip\'s parallel access capabilities. Additionally, the chip also features an asynchronous mode which decreases the synchronization time of the chip when used in applications where highly accurate timing is necessary. This makes it an ideal chip for users who require high data throughput with short wait times.

Overall, the IS61LV2568L-8TL is an advanced SRAM chip with a wide range of applications, from digital storage systems in handheld devices to primary stack memory in PLCs. It utilizes dynamic RAM cells and a divided architecture to achieve very fast read/write speeds, making it an ideal device for users who require high data throughput with low wait times. The chip also features asynchronous and page mode operations which further increases its efficiency for certain specific applications.

The specific data is subject to PDF, and the above content is for reference

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