IS61LV256AL-10TLI-TR

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IS61LV256AL-10TLI-TR is a low-power CMOS low-power static random access memory (SRAM) composed of 256K words by 16 bits each. It is suitable for battery-backed applications such as automotive and industrial controllers. It is a versatile device that provides reliable operation and enhanced design flexibility.

Application Field

IS61LV256AL-10TLI-TR is mainly used in wide range of applications, including industrial control, automotive systems, cellular phones, consumer electronics, communications and embedded control. It is capable to store a wide variety of user data, including configurations, settings, code and other important information.

For industrial control systems, it can be used to store real-time information on production lines. The fast read and write speeds and wide temperature range of IS61LV256AL-10TLI-TR makes it reliable and easy to use in industrial control systems. The low-power design and wide operating voltage makes it suitable for automotive systems that need to power the RAM for long period of time even in extreme conditions.

For cellular phones and consumer electronics, it is an ideal choice for storing application and system data as well as user settings and preferences. It can store a variety of information such as contacts, messages, and recent changes in configuration. As the devices become smaller and more powerful, the need for faster and more reliable memory devices is increasing. IS61LV256AL-10TLI-TR is a perfect solution for these devices.

The device is also widely used in communications devices such as routers, switches, firewalls and base station system. It is widely adopted for storage because of its ability to store large amount of data securely. The wide range of temperature range and fast read and write speeds makes it suitable for long-distance transmission.

Working Principle

IS61LV256AL-10TLI-TR works by using voltage to store data into memory cells. The data is stored temporarily when power is turned off, but is lost when power is removed. This device uses an array of 256K x 16 multi-level DRAM cells, each consisting of four transistor elements. In order to preserve data integrity, each cell is designed with an advanced error correction mechanism for restoring data and a data refresh function. The refresh frequency is controlled by the internal refresh controller.

The IS61LV256AL-10TLI-TR offers continuous read or write operations with a maximum data rate of 40 MHz. It supports multiple operating modes, such as burst mode, asynchronous and synchronous data transfer. In burst mode, the memory controller can automatically fetch up to 32 or 64 data words without needing to specify the starting address for all the data words.

It also offers auto power-down mode and standby mode to reduce power consumption when accessing the memory. The device supports interleaving mode, split access and queue mode, which allow concurrent reading and writing operations. It can also use the additional features of address hold, write inhibition, and data masking to prevent unwanted changes to the stored data.

The device supports many kinds of data formats such as 8-bit (byte), 16-bit (word), 32-bit (double word), and 64-bit (quad word) formats. The internal register allows setting of multiple parameters such as burst length, operating mode, access timing, as well as data formats. This allows users to customize their data access settings for better performance.

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