IS61LV5128AL-10K

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3.135 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:	36-SOJ

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Introduction

IS61LV5128AL-10K is a low-power CMOS static RAM (SRAM) family uniquely designed to provide very high access speeds while retaining low power consumption over a wide voltage range. In addition, IS61LV5128AL-10K\'s low-power design will allow you to increase system performance while reducing power consumption.

Memory

IS61LV5128AL-10K SRAM provides the highest data throughput rates currently available. An asynchronous (asynchronous) interface is used to transfer data to and from the internal data memory array. The device has a full access time of 10ns and a cycle time of 13.5ns at 3V. The device also includes status flags that indicate device readiness and indicate the state of the device\'s input and output pins.

Application Field

Due to its high data throughput rate and wide voltage range, IS61LV5128AL-10K is ideal for high-speed memory applications such as networking, broadcast video, multimedia, server applications and medical imaging.

Working Principle

IS61LV5128AL-10K SRAM works by storing data in an array of memory cells, typically made of 6-transistor cells. Each cell consists of a sense amplifier, a write driver, and a discharge circuit. These cells are organized in blocks and the memory is organized similar to DRAM and is divided into rows and columns. When a column address is received, the corresponding row is decoded and the content of that cell is read or written to.The device is accessed by a 3-pin address/data bus, an active-high read/write control pin, and an active-low chip enable pin. Data is accessed through the address/data bus and is clocked into the device via a rising edge on the write pin. Data is clocked out of the device on the falling edge of the read pin or on the rising edge of the chip enable pin. The device also features an asynchronous write-data-in ready output flag, which is active when the internal write data-in latch is ready to accept new data. A busy flag is asserted when the write data-in latch is being accessed, ensuring that the device’s timing parameters are met by the external system. On the read cycle, a valid data flag is asserted when valid data is present at the read data-out pins.

Conclusion

IS61LV5128AL-10K static RAM is an excellent choice for high speed applications. Its low power and wide voltage range allow for increased system performance, while its high data rates allow for smooth data transfer. The device also includes several flags and latches that ensure the device’s timing parameters are met. This makes it a highly versatile solution for all types of memory applications.

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