IS61LV5128AL-10TLI-TR

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The IS61LV5128AL-10TLI-TR is a 16 Megabit (2 Megabyte) CMOS SRAM organized as 131,072 words by 8 bits. It is designed to provide high speed and low power operation. The IS61LV5128AL-10TLI-TR offers the low voltage requirement of 2.7V, allowing it to be a good choice for cost-sensitive, battery-operated applications.

The IS61LV5128AL-10TLI-TR is classified as one of a number of memory types. Memory is defined as a device that stores and supplies data or information to a computer or device. Memory can be divided into two categories, primary memory and secondary memory. Primary memory is typically volatile, meaning the data within is erased when the power is turned off. Examples of primary memory include random access memory (RAM) and cache memory. Secondary memory is typically non-volatile, meaning the data remains stored even when the power is turned off. Examples of secondary memory include flash memory, hard drives, and optical discs.

The IS61LV5128AL-10TLI-TR belongs to the primary memory category. It is a type of static random access memory (SRAM) that uses bistable latching circuitry to improve memory stability. This type of integrated circuit requires no refreshing of its contents and so has a very fast access time of up to 10 nanoseconds. Its low power consumption and low voltage requirements make it an attractive option for cost-sensitive, battery-operated applications where performance, power, and size are key considerations. Typical applications for such memory include digital cameras, cellular phones, hand-held computers, network hubs, and telecommunication transceivers.

The IS61LV5128AL-10TLI-TR offers several benefits over other memory types. It offers high speed access to quickly store and retrieve large amounts of data. Its low power requirements make it the ideal choice for battery-operated applications since it will not deplete a device\'s power source quickly. Its low voltage requirements allow it to be used in a variety of mobile applications, such as digital cameras, where low power and small size requirements must be met. In addition, its fast access time makes it the ideal choice for time-critical applications, such as gaming, multimedia, and telecommunication transceivers.

The IS61LV5128AL-10TLI-TR is designed with a synchronous SRAM architecture. The SRAM is organized in banks of eight bit memory cells and organized into bytes. The bytes are further organized into blocks that are then connected via an aluminum bond pad. The pads connect the various elements of the device and provide for the address, control and data connections.

The IS61LV5128AL-10TLI-TR memory cells utilize a standard 6T architecture. This architecture is composed of six transistors that are arranged in a stack, and their purpose is to store one bit of data. A 6T SRAM cell consists of a master latch and a companion latch, which are connected by four interconnecting transistors. When the master latch is asserted, data is written to the SRAM cell. When the companion latch is asserted, the data is read out from the SRAM cell.

The IS61LV5128AL-10TLI-TR is a low-voltage, low-power, high-speed memory chip that is suitable for use in cost-sensitive, battery-operated applications. Its synchronous SRAM architecture and 6T memory cell provide fast access times and low disruption to other devices. The low power requirements are especially attractive as they help to preserve the device\'s power source. Its low voltage requirements make it suitable for a variety of mobile applications, such as digital cameras, where size and power must be kept to a minimum.

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