IS61NLF51218A-7.5B3I

IS61NLF51218A-7.5B3I is a type of memory device, specifically a non-volatile ferroelectric random access memory (FRAM). FRAM devices are unique; one important benefit of FRAM technology is that it can be re-programmed multiple times without the need for a power source to maintain data, unlike competing products such as E2PROM and SRAM.

IS61NLF51218A-7.5B3I memory devices are often used in explosive or hostile environments, or in industrial and automotive settings where power sources are not readily available. This FRAM device is available in a variety of sizes and configurations to best meet the needs of the application. IS61NLF51218A-7.5B3I is available in 512K-bit and 8K-word arrays, with a 7.5-µs write time, and a 6.75-µs read time. Both versions are rated for more than one million cycles of write-erase capability.

IS61NLF51218A-7.5B3I devices offer a number of features that add to their utility. They feature non-volatile storage and the ability to retain data for more than 50 years, even in the absence of power. This FRAM device also features a write-protect feature, which allows for resetting the write protection setting with the Read Protection Register. Additionally, IS61NLF51218A-7.5B3I offers an adjustable read voltage setting, which enables the device to be programmed and read back using the same voltage settings. This adjusts the power consumption, making IS61NLF51218A-7.5B3I a more cost-effective choice for data storage.

The working principle of IS61NLF51218A-7.5B3I involves the use of ferroelectric processing. Ferroelectric material is composed of positively charged ions and electrically polarized molecules, arranged so that they can be changed through the application of an electric field. When a voltage is applied across the ferroelectric material, the molecules become aligned in one direction, creating a bit. When the voltage flips, the molecules align in the opposite direction; creating the opposite bit. This results in a non-volatile memory cell, which does not require a power source to maintain its data.

In operation, IS61NLF51218A-7.5B3I uses a write-erase cycle to rewrite the memory cells. The device sends data using three wires: a data input (SI) wire, a data output (SO) wire, and a clock (CK) wire. The device includes a high-speed read system which uses a FIFO mode. A write enable signal (WE) is used to configure the device; it can be programmed to write data, erase data, or perform a read cycle.

In summary, IS61NLF51218A-7.5B3I is a non-volatile ferroelectric random access memory device that is often used for data storage in hostile environments and industrial applications. This device features a number of features that make it attractive, including several adjustable read and write parameters, write-protect feature, non-volatile storage, and the ability to remain in data retention at power-down. Additionally, this device operates using ferroelectric processing, involving a write-erase cycle to rewrite its memory cells.