IS61NLP102418-200B3LI

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Memory: IS61NLP102418-200B3LI Application Field and Working Principle

IS61NLP102418-200B3LI is a 1M x 8bits x 4 banks dual supply non-volatile asynchronous dynamic random access memory (NvSRAM) module, with a low voltage read operation and low power consumption, making it suitable for applications in memory-intensive industrial, automotive and consumer electronics. This module can be used in both 5V and 3.3V microcontrollers without additional supply circuitry, and can be used for traditional SRAM functions such as storing, buffering and caching, and for mission-critical real-time data storage and retrieval, such as industrial process control, automotive engine control and telecommunication routing.

Application Field

IS61NLP102418-200B3LI can be used in a variety of memory intensive markets, including industrial, automotive, networking, consumer and medical. Its low voltage operation and low power consumption allow it to operate in industry standard 5V and 3.3V microcontrollers, making it an ideal choice for data storage and retrieval applications in mission-critical real-time systems. The device is ideal for applications requiring high data security, such as authentication, identification and encryption.

In automotive systems, the IS61NLP102418-200B3LI can be used in engine control units (ECUs), transmission control, traction control, and body electronics. In industrial systems, it is commonly used in process control rods, PLCs, SCADA systems, as well as networking and telecom routers. In consumer electronics, it is used in digital cameras and portable devices, home automation systems and embedded applications.

Working Principle

IS61NLP102418-200B3LI is a dual-supply asynchronous dynamic random access memory (NvSRAM) module, offering high speed random read/write capability, using a single asynchronous interface. It has a data transfer rate up to 16MHz, with a low voltage (1.8/2.7V) read/write operation. The device also features built-in write protection, providing enhanced reliability and storage of data.

This NvSRAM module features 256 K x 8 bits x 4 banks with a maximum of 32K words selectable. The data bits penetrate through the AES encryption channel and are transferred through the serial port in a special impulse code format. The 4 banks allow the data storage to be divided into four independent address segments, enabling to reach the full throughput potential at the same time.

When writing, the data is written to the IS61NLP102418-200B3LI through the module\'s asynchronous interface and is stored in register in a FIFO (first in first out) fashion. Once the data is stored, it is automatically written to the memory. The data is also encoded using the built-in Cyclic Redundancy Check (CRC) to ensure the integrity of the stored data. When reading, the data is retrieved from the memory and transferred to the IS61NLP102418-200B3LI\'s asynchronous interface.

The IS61NLP102418-200B3LI module also features an Automatic Self Refresh (ASR) mode, which can reduce total power consumption by up to 75%. In this mode, the device periodically refreshes its own memory, eliminating the need for an external refresh command. The module also features an optional deep power-down mode, which can be used to power down the module during periods of inactivity.

The IS61NLP102418-200B3LI also features full user-programmable read/write functions such as a programmable write protect and write buffer control as well as a number of other low power consumption features. These features combined allow the device to provide reliable and efficient data storage and retrieval with industry standard 5V and 3.3V microcontrollers.

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