IS61NVP409618B-250B3L

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The IS61NVP409618B-250B3L is a high-speed dynamic random access memory (DRAM) device. It is mainly used in embedded systems, such as embedded industrial controllers, automotive information systems, and other applications that require low-power, high-speed memory.

The IS61NVP409618B-250B3L is a 3 V device and has a maximum clock frequency of 250 MHz. It is based on the 1T-SRAM architecture, which is a combination of SRAM cells and DRAM cells. Its design consists of 9,216 high speed cells in a 9.6 mm x 9.6 mm package with a clock input. It has a fast access time of 10 ns and a clock cycle time of 15 ns. The architecture of the device enables fast data access speeds with low power consumption. It can support 32-bit data width and read/write operations at the same time.

The device is comprised of internal circuits, such as built-in registers and buffers, to provide a wide range of features and configurations. These features include auto-refresh support, programmable memory configuration, chip select signal, and power-on reset and data protection. Additionally, the device features multiplexers and decoding logic that enable it to select a range of addresses, as well as multiplexing several addressable input/output ports.

The working principle of the IS61NVP409618B-250B3L is based on the principle of dynamic random access memory. To store data, the device uses an array of cells that are accessed using one or more address lines. Each cell is connected to two combinatorial lines: an input line for writing data into the cell, and an output line for reading data from the cell. The data stored in the cells is refreshed periodically to maintain its integrity.

In the IS61NVP409618B-250B3L, the data is written into the cells using an 8-bit write cycle using the write enable signal. This signal is sent to the decoder/multiplexer, which then activates the appropriate write line selected by the address input. Data is read out of the cells by sending the appropriate address signals at the read enable signal. The requested data is then outputted at the data output line.

The IS61NVP409618B-250B3L is suitable for a wide range of applications, including embedded systems such as industrial controllers, automotive information systems, and other applications that require high-speed memory with low power consumption. Its fast access time and clock frequency enable rapid data access and retrieval, making it an ideal solution for embedded applications.

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