IS61NVP51236-200TQLI Allicdata Electronics
Allicdata Part #:

IS61NVP51236-200TQLI-ND

Manufacturer Part#:

IS61NVP51236-200TQLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: IS61NVP51236-200TQLI datasheetIS61NVP51236-200TQLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3.1ns
Memory Interface: Parallel
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

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The IS61NVP51236-200TQLI is a high-performance static random access memory (SRAM) device in the industry\'s smallest package. Its ability to provide higher densities of memory capacity, coupled with excellent access times of 90ns, makes the IS61NVP51236-200TQLI an ideal choice for a variety of applications. These applications range from embedded processor designs, to card-based applications, to game consoles and automotive applications supporting multimedia and navigation systems.

The IS61NVP51236-200TQLI is a 5-volt-only part and is available in a 144-pin thin quad flat package (TQFP) that is only 12 mm X 12 mm in size, making it one of the smallest SRAM packages available. The device offers 512K x 36 bits of asynchronous SRAM. It is available in a simple, pin-compatible configuration.

The working principle of the IS61NVP51236-200TQLI is that it uses a core data-storage structure which utilizes two 6-transistor (6T) cells. Consisting of two latches, one for storing the bit and the other for the complementary bit, this structure provides the SRAM device with internal data storage and stability for a given write/read cycle. The device also utilizes a read/write architecture that allows for faster data speeds and higher pot speeds.

The IS61NVP51236-200TQLI has several features that put it a step above the competition. First, it contains a high-speed read-write architecture allowing maximum read speed of 90 ns. The device also recognizes and responds to four chip select signals. Each chip select signal has a read/write enable signal which allows each chip select to have its own unique read and write speed. The device also offers a burst read capability that allows fast access to multiple addresses.

The IS61NVP51236-200TQLI also incorporates a programmable address decoder and an output-enable control circuit. This allows the device to provide an output-enable signal for each access. This is an important feature as it allows for direct interfacing of the device and the data bus. Finally, the device was designed to be low-power consuming. It has a shut down feature which reduces the device power consumption to almost zero when the device is not in use.

The IS61NVP51236-200TQLI is suitable for a wide range of applications from embedded processor designs, to card-based applications, to game consoles and automotive applications supporting multimedia and navigation systems. With its 512K x 36 bit wide word, fast 90ns access time, and TQFP package, the IS61NVP51236-200TQLI is a great choice for embedded designer.

The specific data is subject to PDF, and the above content is for reference

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