IS61QDB41M36A-250M3L

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Memory plays a vital role in modern computing and IS61QDB41M36A-250M3L is an example of one such technology. This synchronous high-speed burst Static Random Access Memory (SRAM) is available in two major configurations: as a stand-alone device and as part of an integrated package. Developed by Integrated Silicon Solutions (ISS), it is employed in communications and industrial automation applications.

Though IS61QDB41M36A-250M3L is designed for high speed burst read/write applications, it is also capable of providing data Storage and retrieval. It employs an 8-Bit parallel data bus and comes with a maximum address space of 4M-bits. This SRAM device is mounted on a printed circuit board, a type of board that is used for connecting electrical components. Its package also includes provisions for cooling, allowing it to be used in hostile environments.

As a synchronous high-speed burst SRAM, its operating frequency is relatively high compared to other SRAM devices. It has a data transfer rate of 250Mb/s, allows up to 32 bits to be transferred in a single access, and boasts a cycle time of 4ns. It supports a wide range of data transfer modes, including burst accesses with 2, 4, 8 and up to 32 bit words.

The working principle of IS61QDB41M36A-250M3L is based on the concept of capacitance, which enables it to store small electric charges and enable data transfer operations. It uses MOSFETs (metal-oxide-semiconductor field-effect transistors) as the principal data storage elements and is connected to the main processor via an address and control bus. The data flow between the SRAM device and the processor is managed via a series of control signals that are generated by the processor.

IS61QDB41M36A-250M3L is designed for a wide range of applications, including communication and industrial automation. It’s capacity and speed make it particularly suitable for high speed data communication and other critical applications, such a central processing units, controllers, and programmable logic controllers. Its high capacity also makes it a popular choice for high performance computing applications.

Integrated Silicon Solutions’ IS61QDB41M36A-250M3L is a reliable and powerful synchronous high-speed burst SRAM device. It’s operation is based on the concept of capacitance, which allows it to store and transfer small electrical charges. With a wide range of data transfer modes and a maximum data transfer rate of 250Mb/s, it can be used in a range of applications, including communication, industrial automation, central processing units and high performance computing.

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