| Allicdata Part #: | IS61VPS102418A-250TQL-ND |
| Manufacturer Part#: |
IS61VPS102418A-250TQL |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ISSI, Integrated Silicon Solution Inc |
| Short Description: | IC SRAM 18M PARALLEL 100TQFP |
| More Detail: | SRAM - Synchronous Memory IC 18Mb (1M x 18) Parall... |
| DataSheet: | IS61VPS102418A-250TQL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Synchronous |
| Memory Size: | 18Mb (1M x 18) |
| Clock Frequency: | 250MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 2.6ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.375 V ~ 2.625 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-LQFP |
| Supplier Device Package: | 100-TQFP (14x20) |
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Memory plays an important role in almost every electronic device or circuit that does some processing and requires a storage facility. With memory, information or data can be held for a short or long period of time. IS61VPS102418A-250TQL is a kind of static random access memory (SRAM) incorporated with low-power consumption and fast access time. It has been widely used in various applications because of its power efficient feature, providing high-data transfer rate and low-power operations.
IS61VPS102418A-250TQL is composed of a single integrated circuit package that contains 4,096 bits of memory.It is widely applied in many fields, including aerospace, navigation systems, industrial control systems, and automotive electronics. The device has been specifically used most widely in the fields of image processing and intelligent instruments, such as digital clocks, counters, barcode scanners, automotive systems, and office equipment.
The IS61VPS102418A-250TQL utilizes an internal cell structure composed of four transistors, with metal oxide semiconductor (MOS) field-effect transistors (FETs) that have been arranged in a cross connected layout. These FETs are made up of a single N-channel FET and three P-channel FETs. The two N- and two P-channels are connected together to form two cross-coupled inverters that drive a MOSFET data switch. This data switch is then connected to the bit lines and sense amplifiers to provide reading or writing to the memory.
IS61VPS102418A-250TQL Memory has a low power operation with a minimum active current of 10mA at 5V and 10ns access time, allowing the device to operate at a higher speed rate. The device also has an extended temperature range of 0°C to 70°C and an operating voltage range of 2.7V to 6V. Furthermore, it has an low falling edge write pulse width of 1µs and a maximum data transfer rate of 3Mbits/s. The device has also been designed to ensure better data protection with a wide input voltage range between 2.6V and Vcc+ 0.6V which prevents data corruption during power failure.
In summary, IS61VPS102418A-250TQL Memory is a low power, high density, and fast access memory which has been widely used in various applications. With its low power consumption and fast access times, the device provides high-data transfer rates, ensures data protection, and operates from extended temperature and voltage range.
The specific data is subject to PDF, and the above content is for reference
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IS61VPS102418A-250TQL Datasheet/PDF