IS61VPS102418B-250TQL-TR

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Introduction

IS61VPS102418B-250TQL-TR is a kind of synchronous dynamic random access memory (SDRAM) designed by Integrated Silicon Solution (ISSI). It has 18 megabit and 8 megabit capacity, up to 250 MHz data rates, 3.3V operating voltage, fast cycle time, and multiple latency cycles. It is available in a 160-pin TSOP-II package. IS61VPS102418B-250TQL-TR synchronous dynamic random access memory has wide application fields, such as consumer electronics, networking, and automotive. With the features of fast cycle time, multiple latency cycles and 3.3V operating voltage, it is an ideal choice for low power applications, such as embedded systems, automotive and military.

Application Field

IS61VPS102418B-250TQL-TR synchronous dynamic random access memory is widely used in consumer electronics, networking and automotive. It is widely used in such embedded system products as mobile phones, PDAs, digital cameras, Video game controllers, Medical instrument, etc. Moreover, it is widely used in industrial control and computing products, for example, industrial computers, telecommunication carriers and network switches, etc. Furthermore, because of the low power feature of IS61VPS102418B-250TQL-TR, it is also widely used in automotive, such as in car audio, car navigation, car safety, car engines and other car equipments.

Working Principle

Designing synchronous dynamic random access memory based on IS61VPS102418B-250TQL-TR, its access time depends on the frequency. The clock synchronously brings data to the chip, then the voltage components are divided into two parts, a storage component and a logic component. The storage component contains a register and a memory made of transistors. The register receives and stores the incoming data, while the transistors in the memory store the binary information which is received by the register. The logic component contains a set of logic circuits which are responsible for performing operations such as address decoding and data transformation.

When a synchronous dynamic random access memory is operating, data transmission occurs through the scan process. The number of cycles needed to access a single piece of data depends on the latency cycles. With the help of this latency cycles, the access time of data can be improved. At the same time, the refresh operation is necessary when operation of the synchronous dynamic random access memory. During the refresh operation, electrons stored in the memory can be used again.

Conclusion

IS61VPS102418B-250TQL-TR synchronous dynamic random access memory has wide application fields, such as consumer electronics, networking and automotive. Moreover, it is also widely used in military equipments due to its low power feature. Its access time depends on the frequency and multiple latency cycles. Data transmission occurs through the scan process and the refresh operation is necessary for data stored in the memory.

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