IS61VPS102436B-166B3LI-TR

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Memory

The IS61VPS102436B-166B3LI-TR is an integrated memory integrated circuit manufactured by the chipmaker Integrated Silicon Solution, Inc. It is an industrial grade device specifically designed for use in industrial, embedded and automotive applications.

The IS61VPS102436B-166B3LI-TR is a static random access memory (SRAM) device. SRAM is a type of memory that stores digital data in an array of bit cells that each store a single bit of data. The device has a written memory capacity of 144Kbits (18K x 8bits). This can be further expanded by using additional packages and slices, depending on the design requirements. The device is available in a SO-16 package and operates at the typical frequency of 166MHz.

The IS61VPS102436B-166B3LI-TR is a low-power device with a low-voltage operation of 3.3V. The device also has low operating current of 1.2mA typical at 166MHz and a self-refresh current of 2mA typical. Its maximum access time is 7ns and its input and output (I/O) access times can be set from 0 to 45ns.

The IS61VPS102436B-166B3LI-TR can be used for applications such as high-speed SRAM, industrial, embedded and automotive applications. It is also suitable for applications that require a high-performance, low-power SRAM. It can also be used in applications where long data retention and high speed are required.

The IS61VPS102436B-166B3LI-TR has a number of different applications, including being used as a cache in high-performance computing systems, being used as a memory buffer in router systems, and being used as a memory-mapped I/O device. It can also be used in applications that require a high-performance, low-power SRAM.

The working principle of the IS61VPS102436B-166B3LI-TR is that of a standard SRAM. The device stores data in an array of bit cells, each cell storing one bit of data. When data is written to the SRAM, it is stored in the corresponding bit cells and is available for reading at any time. When the data is read from the SRAM, a column address and a row address are provided to address the data in the memory array. The column address and the row address are used to locate the specific bit cell in the array where the data is stored.

In addition to the standard SRAM functions, the IS61VPS102436B-166B3LI-TR also has several special features that enhance the device’s performance. It has an auto-detect feature that detects and responds to changes in memory device operation. It also has a data masking feature that provides improved data retention and data security. The device also has a self-refresh feature that reduces power consumption, by allowing the device to refresh itself in absence of an active read or write operation.

The IS61VPS102436B-166B3LI-TR is an integrated memory chip specifically designed for industrial, embedded and automotive applications that require a high level of performance and low power consumption. Its various features and capabilities make it a suitable memory device for a variety of applications.

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