IS61WV102416DALL-10TLI-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	1.65 V ~ 2.2 V
Operating Temperature:	-40°C ~ 85°C (TA)

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IS61WV102416DALL-10TLI-TR Memory Working Principle and Application Field

IS61WV102416DALL-10TLI-TR is a 16 megabit (MB) static random access memory (SRAM) integrated circuit (IC) designed to be used in memory-intensive applications. The SRAM IC is designed to provide ultra-low power consumption and high performance while meeting the needs of various memory-intensive applications.The IS61WV102416DALL-10TLI-TR operates using a single 3.3 volts (V) supply voltage and has a 1024K bit (Kb) capacity. The SRAM IC is capable of executing single-cycle operations and has a fast serial access time (SAR) of just 10 nanoseconds (ns). The IS61WV102416DALL-10TLI-TR is capable of storing data at an operating frequency up to 50 megahertz (MHz).The SRAM IC is designed to provide reliable performance with a wide range of applications. As a memory device, the IS61WV102416DALL-10TLI-TR can be used in a variety of embedded systems such as digital signal processors (DSPs), microcontrollers (MCUs), video game consoles, embedded computer systems, and industrial automation systems. The SRAM IC can also be used to store data in large scale networks and communication systems, as well as for controlling machines and other systems that require data storage.When operating, the IS61WV102416DALL-10TLI-TR uses a synchronous random access memory (SRAM) protocol, which is a memory architecture based on a simple addressing scheme. The SRAM protocol is characterized by fast access times and low noise interference levels.The SRAM protocol is based on an asynchronous cell array design. In this design, the SRAM IC consists of an array of individual storage elements or cells arranged in columns and rows. Each cell is an electrically isolated element and has a unique address within the IC. The address is determined by a combination of the column address and row address lines.The IS61WV102416DALL-10TLI-TR is also designed to enable data to be read and written to the SRAM IC by granting access to one of the cells in the array. Access is granted to the cell by activating the appropriate address lines and the cell is accessed and its contents are read or written.When writing to the SRAM IC, the contents of the cell are written in parallel. This enables data to be written to the SRAM IC quickly and efficiently. When reading from the SRAM IC, the contents of the cell are read in serial fashion. This is a slower process but allows for more efficient usage of the SRAM IC\'s resources.The IS61WV102416DALL-10TLI-TR uses a single 3.3 volts (V) supply voltage, as well as a 1.65 volts (V) standby voltage. It has a standby current of less than 28 microamperes (mA) and a maximum active current of 500 mA. The SRAM IC also has a data retention voltage of 1.2 volts (V) and a temperature range of -40°C to +125°C.Overall, the IS61WV102416DALL-10TLI-TR is an excellent choice for embedded applications that require low-power operation and high performance. The SRAM IC\'s simple addressing scheme and easy-to-use SRAM protocol make it perfect for use in a variety of embedded applications. It is also an ideal choice for applications that require reliability and long-term stability.

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